Samsung Electronics Co., Ltd.

Seoul National University

SangLyul Min

Donggi Lee

Taesung Jung

Jinhyuk Kim

Duckhyun Chang

Bryan Suk Joon Kim

Byungse So

Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed.

Memory device and program method thereof

Growing community of inventors

Seoul, South Korea

SangLyul Min