Samsung Electronics Co., Ltd.

Sanglok Kim

Chiweon Yoon

Youngdon Choi

Byunghoon Jeong

Jungjune Park

Kyoungtae Kang

Joonyoung Kim

Eunjin Song

A data flip-flop circuit includes a flip-flop, a recovery latch and a cut-off transistor. The flip-flop stores a data signal that is input, using a clock signal and a virtual power supply voltage and provides the stored data signal as an output signal at an output node in response to a rising transition of the clock signal. The recovery latch is connected to a power supply voltage and a ground voltage, is connected to the flip-flop at the output node, stores the output signal internally in response to a first transition of a chip enable signal, recovers the stored output signal in response to end of a power gating interval based on the chip enable signal, and provides the recovered output signal to the flip-flop. The cut-off transistor floats the virtual power supply voltage provided to the flip-flop based on a first power gating signal.

Data flip-flop circuit of nonvolatile memory device and nonvolatile memory device including the same

A data transfer circuit in a nonvolatile memory device includes first repeaters, second repeaters and signal lines. The signal lines connect the first repeaters and the second repeaters, and include a first group of signal lines and a second group of signal lines alternatingly arranged. The first repeaters include a first group of repeaters activated in a first operation mode and a second group of repeaters activated in a second operation mode. The second repeaters include a third group of repeaters activated in the first operation mode and are connected to the first group of repeaters through the first group of signal lines floated in the second operation mode, and a fourth group of repeaters activated in the second operation mode and are connected to the second group of repeaters through the second group of signal lines floated in the first operation mode.

Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same

A semiconductor memory device included in each of a plurality of chips which are divided by a scribe lane and formed on an upper surface of a wafer, includes a memory core and a built-in self test (BIST) circuit. The memory core includes a memory cell array that stores data and a data input/output circuit connected to a data input/output pad. The BIST circuit is connected to a test pad that is separate from the data input/output pad. The BIST circuit generates test pattern data including first parallel bits based on commands and addresses received from an external automatic test equipment (ATE) during a wafer level test process performed on the semiconductor memory device. The BIST circuit tests the memory core by applying the test pattern data to the memory cell array through the data input/output circuit.

Semiconductor memory device, method of testing the same and test system

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Seoul, South Korea

Sanglok Kim