Samsung Electronics Co., Ltd.

K. C. Tech Co., Ltd.

Research & Industrial Cooperation Group

Sangkyun Kim

Boun Yoon

Yun-Jeong Kim

Inkwon Kim

Sanghyun Park

Byoungho Kwon

Kichul Park

Ki Hoon Jang

Youngbeom Pyon

Jihye Kim

Jongwoo Kim

Hoyoung Kim

Seungho Park

Jaewoo Lee

Dong-Min Kang

Hyosan Lee

Taeyong Kwon

Youngsu Moon

Ju-hyun Kim

Jaehak Lee

Jungsik Choi

Jiyeun Kim

Jaeik Lee

Young Taek Hong

Boyun Kim

Ingoo Kang

Wonki Hur

Jungeun Kang

Hyukmin Kim

Bohyeok Choi

Wooin Lee

Yearin Byun

NamSoo Kim

Yongman Ro

Seungji Yang

Se Jung Park

A slurry composition is used to treat a surface of a target structure including at least one of a first polishing target film and a second polishing target film, which include different materials from each other, by a chemical mechanical polishing (CMP) process. The slurry composition includes: polishing particles; a first inhibitor including a nonionic polymer to selectively bond to the first polishing target film; and a second inhibitor including an anionic polymer to selectively bond to the second polishing target film. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a target structure including at least one of a first polishing target film and a second polishing target film; applying the slurry composition onto the target structure; and treating a surface of the target structure by a CMP process while the slurry composition covers the target structure.

Slurry composition and method of manufacturing integrated circuit device by using the same

A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including a first organic polishing booster including a quaternary amine group; a second organic polishing booster including an amino acid; and a carrier; wherein inorganic polishing particles are not included in the slurry composition or included in an amount of less than 0.01% by weight.

Slurry composition for chemical mechanical polishing

A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.

Method of fabricating semiconductor device

Semiconductor device and method of fabricating the same

A patterning method for fabricating a semiconductor device includes forming, for example sequentially forming, a lower buffer layer, a first channel semiconductor layer, and a capping insulating layer on a substrate, forming an opening to penetrate the capping insulating layer and the first channel semiconductor layer and expose a portion of the lower buffer layer, forming a second channel semiconductor layer to fill the opening and include a first portion protruding above the capping insulating layer, performing a first CMP process to remove at least a portion of the first portion, removing the capping insulating layer, and performing a second CMP process to remove at least a portion of a second portion of the second channel semiconductor layer protruding above the first channel semiconductor layer.

Patterning method and a method of fabricating a semiconductor device using the same

Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.

Slurry compounds and methods of fabricating semiconductor devices using the same

Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.

A polishing slurry includes an abrasive, a dispersion agent, a polish accelerating agent and an adhesion inhibitor. The adhesion inhibitor includes a benzene compound combined with a carboxyl group. Methods of planarizing an insulating layer using the slurry are also provided.

Slurry for polishing and planarization method of insulating layer using the same

A person-based digital photo clustering method, medium, and apparatus and a person-based digital photo albuming method, medium, and apparatus. The clustering method may include detecting a face area from photo data, extracting predetermined content-based face feature value information from the detected face area, obtaining person-based photo clustering hint information, and performing person-based clustering by applying photo clustering hint information to the extracted content-based face feature value information. The person-based digital photo albuming method may include generating photo description information for identifying at least a photo, generating albuming tool description information supporting person-based photo clustering and including at least a parameter for person-based photo clustering, performing photo albuming including person-based clustering by using at least photo description information and albuming tool description information, generating predetermined photo group description information from photo albumed data, and generating predetermined photo album information by using photo description information and photo group description information.

Method, medium, and apparatus for person-based photo clustering in digital photo album, and person-based digital photo albuming method, medium, and apparatus

Growing community of inventors

Hwaseong-si, South Korea

Sangkyun Kim