Samsung Electronics Co., Ltd.

Snur & Db Foundation

Sangkwon Moon

Heewon Lee

Kyung Ho Kim

Hyunkyo Oh

Sung Won Jung

Seunguk Shin

Jisoo Kim

In Hwan Doh

Seungkyung Ro

Seung-Yeon Lee

NamWook Kang

Taehoon Kim

Kyungryun Kim

Jaeyong Jeong

Jihong Kim

Woohyun Kang

Seongjun Ahn

Jin Gu Jeong

Jin-Soo Kim

Hyun Jin Choi

Chul Ju Lee

Youngdeok Seo

Hyunchul Park

Ji Hong Kim

Su Chang Jeon

Young-Sik Lee

Sung-Hwan Bae

Jinkyu Jeong

Jinyoung Lee

Donghoo Lim

Hee-Tai Oh

Sejeong Jang

Garam Kim

Suejin Kim

Ji Sung Park

Hyery No

Sang-Hwa Han

Youngjoo Seo

A storage device according to an embodiment includes a memory device configured to apply a first program voltage and a first verification voltage to a first word line and output, based on a program state of each of a plurality of memory cells connected to the first word line, a speed information representing a speed characteristic of each of the plurality of memory cells; and a memory controller configured to determine at least one memory cell to be programmed into a predetermined program state; determine, among the at least one memory cell, at least one target memory cell having a first speed characteristic based on the speed information; and perform a state-shaping operation to convert a data corresponding to the predetermined program state for the at least one target memory cell into a value corresponding to a program state different from the predetermined program state.

Storage device for performing a state shaping operation on data based on a speed characteristic of a memory cell and operation method thereof

An operation method for controlling a nonvolatile memory device includes initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device. The respective reliability operation includes detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level. The operation method also includes determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value. The operation method further includes selectively skipping or performing a next instance of the respective reliability operation based on the determination result.

Operation method of storage controller for nonvolatile memory device

A storage device includes a non-volatile memory device configured to store fast cell information obtained from a threshold voltage distribution formed through a one-shot program for memory cells; and a storage controller configured to read the fast cell information from the non-volatile memory device during booting or initialization to perform mapping a fast cell area based on a fast cell management policy, wherein the fast cell information is acquired through the one-shot program performed in a test stage or a mass production evaluation stage, and is stored in the non-volatile memory device before a firmware of the storage controller is executed.

Storage device having fast cell information and operation method thereof

Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

Nonvolatile memory device and operation method thereof

An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

User device including a nonvolatile memory device and a data write method thereof

A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.

Storage device monitoring and storing on cell counts of blocks and operating method thereof

A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

Data storage device including nonvolatile memory device and operating method thereof

Embodiments include a method of operating a storage device including a flash memory, comprising: calculating a reuse period of a selected memory block in the flash memory; determining a set of wordlines of the selected memory block for writing data based on the reuse period of the selected memory block; and writing the data into the set of wordlines.

Method for operating storage device determining wordlines for writing user data depending on reuse period

A method for operating a storage device including a flash memory, comprising: determining a data reliability level of the flash memory; comparing the data reliability level with a threshold; and changing an operating condition of the flash memory to improve the data reliability level of the flash memory when the data reliability level of the flash memory is lower than the threshold.

Method for operating storage device changing operation condition depending on data reliability

A method of processing data in a memory system including a control unit and a hybrid memory device having a first memory and a second memory, includes; receiving first write data, storing the first write data in the first memory and assigning a first group state from among a plurality of group states to the stored first write data in response to first attribution information, completing a data processing operation in the memory system directed to the stored first write data that changes the attribution information associated with the stored first write data by monitoring of the first attribution information using an operating system running on the memory controller, and changing the first group state assigned to the stored first write data to a second group state from among the plurality of group states, the second group state having a different priority than a priority for the first group state.

Hybrid memory device for storing write data based on attribution of data stored therein

Growing community of inventors

Osan-si, South Korea

Sangkwon Moon