Samsung Electronics Co., Ltd.

Sangjun Yun

Uihui Kwon

Hyoshin Ahn

Seongnam Kim

Jae Hoon Kim

Kyungtae Nam

Eunsun Noh

Se Chung Oh

Sung Chul Lee

Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

Metal oxide semiconductor field-effect transistor (MOSFET) devices and manufacturing methods thereof

A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with the second magnetic pattern therebetween. The short preventing pattern includes at least two oxide layers and at least two metal layers, which are alternately stacked.

Magnetic memory device and method for fabricating the same

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Hwaseong-si, South Korea

Sangjun Yun