Lam Research Corporation

Sangjun Park

Zhongkui Tan

Qian Fu

Qing Xu

Yoko Yamaguchi

Wonchul Lee

Yasushi Ishikawa

Jayoung Choi

Sung Jin Jung

Lisi Xie

Patrick Ponath

Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.

Directional deposition in etch chamber

A photon-assisted plasma processing method for processing a substrate with a process layer is provided. A process gas is flowed into the chamber. The process gas is formed into a plasma. The process layer is exposed to the plasma. The process layer is illuminated with a light with a wavelength of between 200 nm and 1 micron, while exposing the substrate to the plasma.

Line edge roughness improvement with photon-assisted plasma process

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Fremont, CA, United States of America

Sangjun Park