Samsung Electronics Co., Ltd.

Sangjun Choi

Woosung Han

Kyungho Lee

JungChak Ahn

Hyosan Lee

Heegeun Jeong

Yoondong Park

Jongeun Park

Junemo Koo

Tae Eung Yoon

Changki Hong

Ihara Hisanori

HyungJin Bae

Hyungho Ko

Sanggyun Woo

Donggyun Han

Hyunwo Kim

Joontae Moon

Hyoungdo Kim

Sihyeung Lee

HoonSang Oh

Sungkwon Hong

Provided are image sensors and methods of fabricating the same. The image sensor has a transfer gate, which may be configured to include a buried portion having a flat bottom surface and a rounded lower corner. This structure of the buried portion enables to transfer electric charges stored in the photoelectric conversion part effectively.

Image sensors and methods of fabricating the same

An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.

Image sensor

An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the photoresist, and subsequently removing the chemically altered photoresist with a third reactant. In one example, the first reactant is supercritical carbon dioxide (SCCO), the second reactant is ozone vapor, and the third reactant is deionized water.

Apparatus and method for removing photoresist from a substrate

A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer includes a comonomer having an acid-labile substituent group or a polar functional group, and a copolymer of alkyl vinyl ether and maleic anhydride. The copolymer is represented by the following structure:where k is an integer of 3 to 8, and where X is tertiary cyclic alcohol having 7 to 20 carbon atoms.

Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns

A resist pattern can be formed on a microelectronic substrate, the resist pattern comprising a resist material. A coating layer, including a water-soluble resin, is formed on the resist pattern, wherein the water-soluble resin and the resist material are miscible with one another and intermix to provide an intermixed layer comprising the resist material and the water-soluble resin between the resist pattern and a non-intermixed coating layer. The intermixed layer can be hardened and the non-intermixed coating layer can be removed from the hardened intermixed layer.

Methods of fabricating microelectronic features by forming intermixed layers of water-soluble resins and resist materials

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Seoul, South Korea

Sangjun Choi