Samsung Electronics Co., Ltd.

Sangjin Lim

Cheolhwan Lim

Donghun Heo

Kwangho Kim

Haejung Choi

A laser detecting circuit is provided. The laser detecting circuit includes a latch circuit with a first inverter configured to invert a first output signal at a first node to generate a second output signal at a second node, and a second inverter configured to generate the first output signal based on the second output signal. The second inverter includes a plurality of PMOS transistors connected in series between a first source voltage and the first node, and a plurality of NMOS transistors. A gate of each of the plurality of PMOS transistors is connected to the second node, and a drain of each of the plurality of NMOS transistors is connected to the first node. The plurality of NMOS transistors includes dummy NMOS transistors and normal NMOS transistors.

Laser detecting circuit and semiconductor apparatus including the same

A glitch detector includes a sensing circuit, a glitch-to-pulse generator and a comparing circuit. The sensing circuit generates a glitch voltage and at least one reference voltage based on a first power supply voltage. The glitch-to-pulse generator receives the first power supply voltage or the glitch voltage, and generates at least one pulse voltage including a pulse when the glitch occurs on the first power supply voltage. The comparing circuit generates at least one detection voltage by comparing the glitch voltage with the at least one reference voltage based on the pulse included in the at least one pulse voltage. The at least one detection voltage is activated when the glitch occurs on the first power supply voltage.

Growing community of inventors

Osan-si, South Korea

Sangjin Lim