Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Lg Electronics Inc.

Lg Display Co., Ltd.

Lg Innotek Co., Ltd.

Femtobiomed Inc.

Korea University Research and Business Foundation

N15 Co., Ltd.

Sanghyun Lee

Sungjin Kim

Bonkwon Koo

Sunho Lee

Hwanjin Jung

Youngmook Oh

Naeun Kim

Jungmin Oh

Seonju Lee

Dae-Sik Lee

Cheolwoong Seo

Woongsik Kim

Dongwon Kim

Jaemin Lee

Jongchul Park

Junkyo Lee

Seokwoo Kim

Jin-Su Byun

Jeongyun Lee

Sunku Kwon

Keunoh Kang

Songkyu Kim

Tae-Jong Jun

Songyi Han

Gwangmin Cha

Siduk Sung

Hongsik Shin

Minsoo Park

Hyunsoo Kim

Deoksang Yun

Hwanwoong Choi

Hyeongju Seo

Kisoo Kim

Chulwoo Kim

Kisang Yoon

Sangwoon Jeon

Selim Yoon

Hyunji Park

Hyunil Lee

Namjae Lim

Junhyeok Choi

Saehee Han

Jae Sung Bae

Hyosung Lee

JaeJung Han

Jinsu Byun

Minwoo Park

Mingyu Kim

SangHun Yoon

Minjung Kim

Jongho Lee

Donghyun Lee

Younghoon Kim

Jongmin Baek

Cheol Kyu Kim

Yang-Ho Jung

Yongseok Lee

Byungchul Kim

Dohyoung Kim

Jinhyoung Kim

Boyeon Kim

Woong Sik Kim

Yun Seok Choi

Yanguk Nam

Sungjun Lee

Pil Soon Hong

Unbyoung Kang

Jinho Choi

Jinyoung Song

Kyung-Uk Choi

Seunghyun Bang

Jeonghwan Hwang

Taeyong Kim

Jiho Yoo

Sungwoo Kang

Donghwan Bae

YongJoong Yoon

Minseok Shin

Dongwon Park

Keunhee Bai

Gwangsoo Ahn

Ji-Yoon Park

Su-Yeon Sim

Doo-Young Lee

Byungjun Son

Haegoo Jung

Jihwan Choe

Myeongsu Kim

Jaehun Lee

Junho Sim

Myeongcheol Kim

Yeon-Shil Jung

Jaehyuk Chang

Hyo-Chang Ryu

Taejin Kim

Heungsik Park

Kwonyeol Park

Uihyoung Lee

Chunggu Kang

Jeong Bong Lee

A semiconductor device may include PMOSFET and NMOSFET regions spaced apart from each other on a substrate, first and second active patterns provided on the PMOSFET and NMOSFET regions, respectively, a first channel pattern on the first active pattern, a source/drain pattern electrically connected to the first channel pattern, an active contact electrically connected to the source/drain pattern, the active contact including a first conductive pattern and a first barrier pattern enclosing a portion of a side surface and a bottom surface of the first conductive pattern, a gate electrode extending in a direction crossing the first channel pattern, a gate contact electrically connected to the gate electrode, an air gap provided on the first barrier pattern and between the gate contact and the first conductive pattern, and a lower via provided on the active contact. The lower via may be adjacent to the air gap.

Semiconductor device

A display device includes a plurality of first light blocking patterns, a first substrate on the first light blocking patterns, a plurality of second light blocking patterns on the first substrate, a driving device on the plurality of second light blocking patterns, a via insulating layer on the driving device and defining a plurality of light blocking areas, and a light emitting device on the via insulating layer, electrically connected to the driving device and including a light emitting area.

Display device

Electric range

A light path control member according to an embodiment includes a first substrate; a first electrode disposed on the first substrate; a first light conversion unit disposed on the first electrode; a second substrate disposed on the first light conversion unit; a second electrode including a sub-electrode that is disposed between the second substrate and the first light conversion unit and extends along a first direction, and a second sub-electrode that extends along a second direction crossing the first direction; and a third electrode disposed on an upper surface of the second substrate.

Light path control member which switch between a share mode and a privacy mode, and display device including same

An optical path control device and a display device including the same are discussed. The optical path control device can include a first substrate, a first electrode disposed on the first substrate, a second electrode disposed on the first substrate, a second electrode disposed under the second substrate, and a photoconversion layer disposed between the first electrode and the second electrode. The photoconversion layer can include a partition portion and a receiving portion that are alternately arranged, and the receiving portion can include suspended particles. The first electrode can include a first auxiliary electrode disposed on a first area of the first substrate and a second auxiliary electrode disposed on a second area of the first substrate.

Optical path control device and display device including the same

A semiconductor device according to some embodiments of the disclosure may include a fin type active pattern extending in a first direction, a plurality of gate structures on the fin type active pattern and extending in a second direction different from the first direction, a plurality of inter-contact insulation patterns on respective ones of the plurality of gate structures, a plurality of interlayer insulation layers on side surfaces of the plurality of gate structures, and a plurality of contact plugs respectively between pairs of the plurality of gate structures. The fin type active pattern may include a plurality of source/drains. Lower ends of the plurality of contact plugs may contact the plurality of source/drains. The plurality of gate structures may each include a first gate metal, a second gate metal, a gate capping layer, a gate insulation layer, a first spacer, and a second spacer.

Semiconductor device including self-aligned contact and method of manufacturing the semiconductor device

A display device includes: a substrate including a display area, a bending area spaced apart from the display area, and a peripheral area between the display area and the bending area; a dummy pattern on the substrate in the peripheral area; a bank on the dummy pattern in the peripheral area and exposing a portion of the dummy pattern; and a light emitting diode on the substrate in the display area.

A display device includes a display panel including a first area including a peripheral region and an emission region of a pixel of a first group; and a second area including a peripheral region and an emission region of a pixel of a second group; at least one insulating layer disposed on the display panel and overlapping the second area; an organic layer disposed on the at least one insulating layer and overlapping the second area; and a light blocking pattern disposed on the organic layer and overlapping the second area. A first opening corresponding to the emission region of the pixel of the second group is formed in the organic layer, and a first light blocking opening corresponding to the first opening is formed in the light blocking pattern.

In an electronic device and an operation method thereof, the electronic device may include: a memory; communication circuitry configured to transmit and receive data via a node; and a communication processor, wherein the communication processor may be configured to: identify a first time of receiving a paging message and a second time of receiving a synchronization signal/physical broadcast channel (SS/PBCH) block; determine, based on the first time and the second time satisfying a specified condition, the activation time of the communication circuitry based on the reception time of the paging message; receive a paging message; temporarily store the received paging message in the memory; and process the stored paging message based on an SS/PBCH block received after reception of the paging message.

Electronic device for controlling communication circuit based on reception interval between SS/PBCH block and data and method for the same

A plasma etching apparatus includes a chuck configured to support a wafer, and a voltage application unit. The voltage application unit includes a first voltage application part configured to apply a first voltage to the wafer on the chuck, and a second voltage application part configured to apply a second voltage to the wafer on the chuck, the second voltage being different from the first voltage.

Plasma etching apparatus, plasma etching method using the same, and semiconductor fabrication method using the same

An example electronic device may include a plurality of antennas; and at least one communication processor communicating with a first communication network or a second communication network through the plurality of antennas. The at least one communication processor may be configured to set up a call with an external electronic device through the first communication network, identify information related to call quality in a call connected state with the external electronic device, and perform an operation for reducing a number of antennas for reception among the plurality of antennas based on identifying that the information related to the call quality meets a designated condition.

Electronic device and method for reducing current consumption in electronic device connected with communication network

Disclosed are a communication device for performing beamforming and an operating method thereof. The communication device includes: an antenna array configured to simultaneously form a first vertical beam and a second vertical beam for an arbitrary time; a transceiver configured to transmit and receive a signal using a double beam including the first vertical beam and the second vertical beam; and a processor configured to determine a first optimal vertical tilting angle of the first vertical beam based on Inter-Beam Interference (IBI) of the second vertical beam, and determine a second optimal vertical tilting angle of the second vertical beam based on the IBI of the first vertical beam.

Communication device performing beam-forming and operating method thereof

According to various embodiments, an electronic device includes: at least one processor, and the at least one processor is configured to: check at least one event requiring a change in user equipment (UE) capability of the electronic device, change the UE capability of the electronic device based on the at least one event and transmit a TAU request message indicating that UE capability information update is requested, enter an idle state, based on receiving a TAU acceptance message corresponding to the TAU request message in a state in which the UE capability enquiry message corresponding to the TAU request is not received, establish a new RRC connection with the network in the idle state, receive a UE capability enquiry message based on the new RRC connection, and transmit a UE capability information message including the changed UE capability, based on the reception of the UE capability enquiry message.

Electronic device transmitting UE capability and method for operating thereof

This disclosure relates to the 5th generation (5G) or pre-5G communication system for supporting a higher data rate after the 4th generation (4G) communication system such as Long Term Evolution (LTE). The method for operating the core network in a wireless communication system according to this disclosure comprises the processes of determining the content to store in the terminal based on the location information of the terminal, transmitting the content transmission command to the base station so as to transmit the content to the terminal in response to the determination, checking whether the terminal has entered the overload cell, and forming a D2D communication link between the terminal and another adjacent terminal when it is identified that the terminal has entered the overload cell.

Method and apparatus for content transmission using a terminal storage device in a wireless communication system

A display apparatus may include a substrate, a display element disposed above the substrate, an encapsulation layer disposed above the display element and including an inorganic encapsulation layer and an organic encapsulation layer, and a touch-sensing layer disposed above the encapsulation layer. The touch-sensing layer may include a first insulating layer including a side surface inclined with respect to a top surface of the encapsulation layer and including an organic material. The touch-sensing layer may include a conductive layer including sensing electrodes, and a second insulating layer covering the conductive layer and including a refractive index that may be different from that of the first insulating layer.

Display apparatus

Growing community of inventors

Seoul, South Korea

Sanghyun Lee