Samsung Electronics Co., Ltd.

Wonik Qnc Corporation

Sanghyun Cho

Jinwoo Kim

Jaehong Kim

Daehwa Paik

Kwanhee Lee

Seung Hyun Lim

Jongsung Lee

Daeyoung Chung

Joohee Jang

Minchul Lee

Keunyung Byun

Seunghyun Lim

Heechang Hwang

Wonho Cho

Hayoung Ko

Cyuyeol Rhee

Kyungil Kim

Seungyoung Oh

Soyoung Choi

Eunyoung Choi

Yoonjae Yu

An analog-to-digital converting circuit includes a first amplifier configured to output a first output signal by comparing a pixel signal output from a pixel array with a ramp signal, and a second amplifier configured to generate a second output signal based on the first output signal. The second amplifier includes a first transistor configured to provide a power supply voltage to a first output node in response to the first output signal, a second transistor connected with a capacitor through a bias node, wherein the second transistor is configured to turn on in response to an auto-zero signal, a current source connected with the first transistor through the first output node, the current source configured to generate a power current based on a voltage level of the bias node, and a third transistor connected with the current source.

Analog-to-digital converting circuit for decreasing decision delay and operation method thereof

Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.

Processing method for fluorination of fluorination-target component for semiconductor fabrication equipment, which minimizes generation of contaminant particles, and fluorinated component obtained thereby

An A/D converter and an image sensor are disclosed. The image sensor includes: a pixel array including a plurality of pixels; a ramp signal generator configured to generate a ramp signal; and a comparison circuit configured to output a comparison result signal by comparing a pixel signal output by the pixel array with the ramp signal. The comparison circuit includes: a first comparator stage configured to output a first stage output signal according to a result of comparing the pixel signal with the ramp signal, to a first circuit node; a limiter including an n-type transistor having one end connected to the first circuit node and an opposite end to which power supply voltage is applied; and a second comparator stage configured to generate the comparison result signal by shaping the first stage output signal.

A/D converter including comparison circuit and image sensor including same

Disclosed is an image sensor that includes a pixel array including first pixels sharing a first floating diffusion region and second pixels sharing a second floating diffusion region, a first analog-to-digital converter, a second analog-to-digital converter, and a switch circuit. In a first mode, the first analog-to-digital converter processes the first pixels, and the second analog-to-digital converter processes the second pixels. In the second mode, the first analog-to-digital converter processes a first image component of a pixel signal of the first pixels, and the second analog-to-digital converter processes a second image component of the pixel signal of the first pixels. An HDR image is implemented based on processing results of the first analog-to-digital converter and the second analog-to-digital converter.

Image sensor for implementing high dynamic range image using dual conversion gain

An optics-based fingerprint sensor may include a first photodiode, a first metal shield structure that is formed on the first photodiode and includes a first opening, a first color filter structure that is formed on the first metal shield structure and including a second opening exposing the first opening, a second photodiode that is spaced apart from the first photodiode by a predetermined distance, a first nano-optical filter structure that is formed on the second photodiode, and a first band limit filter structure that is formed on the nano-optical filter structure.

Optics-based fingerprint sensor, electric device including optics-based fingerprint sensor, and operation method of electric device

Growing community of inventors

Hwaseong-si, South Korea

Sanghyun Cho