Samsung Electronics Co., Ltd.

Sanghyuck Moon

Kyungho Lee

Eunsub Shim

Seyoung Kim

Hongsuk Lee

Jueun Park

Jaeho Lee

Seungjoon Lee

Masato Fujita

Sungsoo Choi

Jungbin Yun

Seungki Jung

Minji Jung

An image sensor includes: a pixel array including a plurality of pixels, wherein each of the pixels includes first and second photodiodes, first and second transfer gates, and a plurality of active regions; and a logic circuit. Each of a plurality of pixel groups in the pixel array includes a first pixel and a second pixel. The active regions in each of the first pixel and the second pixel include a first active region and a second active region. The first active region is adjacent to the first transfer gate. The second active region is adjacent to the second transfer gate. In each of the pixel groups, a plurality of source-follower transistors respectively has a gate connected to the first and second active regions of the first pixel and connected to the first and second active regions of the second pixel. The source-follower transistors are in the first pixel.

Image sensor

An image sensor includes a substrate having a sensing area, a floating diffusion region arranged in the sensing area, a plurality of photodiodes arranged around the floating diffusion region in the sensing area, and an inter-pixel overflow (IPO) barrier in contact with each of the plurality of photodiodes, the IPO barrier overlapping the floating diffusion region in a vertical direction at a position vertically spaced apart from the floating diffusion region within the sensing area.

Image sensor comprising an inter-pixel overflow (IPO) barrier and electronic system including the same

An image sensor includes first conductive patterns on a first surface of a substrate, and second conductive patterns between the first conductive patterns and the first surface, in which at least one of the first conductive patterns or the second conductive patterns includes a time constant adjustment pattern and neighboring conductive patterns, in which the time constant adjustment pattern extends in a first direction that is parallel to the first surface and the neighboring conductive patterns extend in the first direction and are most adjacent to the time constant adjustment pattern. The time constant adjustment pattern includes one or more time constant adjustment portions that protrude in a second direction that is parallel to the first surface and is perpendicular to the first direction, and the one or more time constant adjustment portions do not overlap the neighboring conductive patterns in the second direction.

Image sensors

An image sensor includes: a pixel array outputting a pixel signal; and a column wiring unit including at least one first column routing wiring extending from the pixel array and including a first connection wiring portion and a protrusion and at least one second column routing wiring including a second connection wiring portion, wherein a sum of lengths of the at least one first connection wiring portion and the protrusion is substantially identical to a length of the at least one second connection wiring portion; and a readout circuit receiving the pixel signal from the column wiring unit.

Image sensor and system including the image sensor

An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

Growing community of inventors

Suwon-si, South Korea

Sanghyuck Moon