Korea Institute of Science and Technology

Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Ulsan National Institute of Science and Technology

Sanghyeon Kim

Jeongeon Oh

Won Jun Choi

Hyung-jun Kim

Jae-Phil Shim

Seongho Cho

Sehee Han

Seung Hyub Baek

Jin-Dong Song

Seong Kwang Kim

Ki-Suk Lee

Soogyu Lee

Jeong Min Baik

Songhee Yang

Seungwoo Chae

Ryounghun Kim

Phillsik Gong

Tae Hyeon Kil

Minsoo Kim

Jung-Hoon Lee

Min Su Park

Jinwan An

Gunwoo Lee

Hansung Kim

Yeon-Su Kim

Yonghwa Lee

Insung Kim

Ji Young Choi

Sungsoo Jun

Hyunsu Ju

Subin Lee

Taeyoung Park

Heejeong Lim

Woojeong Shin

Yunjae Jun

Pavlo Bidenko

Hanhum Park

Hyeong Rak Lim

Jaehoon Han

Jae-Hoon Han

Daemyeong Geum

The present disclosure discloses a power transforming apparatus capable of reducing a stress of a converter switch during a PFC operation, an operation method thereof, and an air conditioner including the same. To this end, the power transforming apparatus according to the present disclosure may determine the number of converters for performing the PFC operation based on a magnitude of input power and a speed of the motor. Furthermore, the PFC operation may be performed using only one converter when determining a low-load in order to improve efficiency. In addition, a target converter channel may be selected using a random function or determined to be changed using a previous operation history without specifying a target converter channel in advance at an initial stage of the PFC operation so as not to add a stress to any one converter switch.

Power transforming apparatus and air conditioner including the same

The present disclosure relates to a motor driving apparatus and an air conditioner including the same. The motor driving apparatus and the air conditioner including the same according to an embodiment of the present disclosure include: a switching device disposed between an inverter and a motor; and a controller, which in response to windings of the motor being switched from a first connection to a second connection, controls an operating frequency of the motor to be less than or equal to a first frequency, and in response to the windings of the motor being switched from the second connection to the first connection, controls an operating frequency of the motor to be less than or equal to a second frequency which is less than the first frequency. Accordingly, burnout of the switching device for switching connection of the motor windings may be prevented.

Motor driving apparatus and air conditioner including the same

The present disclosure discloses a power transforming apparatus capable of reducing a stress of a converter switch during a PFC operation, an operation method thereof, and an air conditioner including the same. To this end, the power transforming apparatus according to the present disclosure may determine the number of converters for performing a PFC operation based on a magnitude of input power and a speed of the motor. Furthermore, target converter channels are arbitrarily selected using a random function at an initial stage of a PFC operation so as not to add a stress to a switch device of any one converter. In addition, in order to disperse a stress to all switches, phases are individually controlled to perform switching operations while changing converters that match the number of converters for performing a PFC operation in a preset cycle, for example, whenever a zero-crossing is detected.

An electronic device is provided. The electronic device includes a housing including a first plate, a second plate, and a side member, a support member disposed in the space between the first plate and the second plate, a first conductive area included in the side member, a protruding area included in the first conductive area protruding from the first conductive area toward an interior of the housing, and electrically connected to the first conductive area, a first circuit board disposed on one surface of the support member, a reinforcement member protruding from the one surface of the support member toward the second direction, a second circuit board extending further than the first circuit board toward the protruding area, and disposed on the reinforcement member, and a connection member electrically connecting the protruding area and the second circuit board, and disposed on the second circuit board.

Electronic device including reinforcement member

Disclosed are semiconductor device fabricating method and semiconductor device fabricated by the same. The method includes forming on a lower mask layer first upper mask patterns and sacrificial spacers that cover sidewalls of the first upper mask patterns, forming first holes in the lower mask layer below the first upper mask patterns, forming second holes in the lower mask layer not covered by the first upper mask patterns and the sacrificial spacers, forming second upper mask patterns filling a space between the sacrificial spacers on the lower mask layer and also forming sacrificial patterns filling the first and second holes, removing the sacrificial spacers, using the first and second upper mask patterns to etch the lower mask layer, and removing the sacrificial patterns.

Semiconductor device and method of fabricating the same

An electronic device according to various embodiments of the disclosure may include a first housing structure, a second housing structure arranged adjacent to the first housing structure, a hinge structure arranged between the first housing structure and the second housing structure and providing a rotational movement between the first housing structure and the second housing structure, a flexible display extending from the first housing structure to the second housing structure, across the hinge structure, and at least one haptic actuator arranged in the hinge structure or adjacent to the hinge structure. The at least one haptic actuator may be arranged in parallel with the folding axis direction of the hinge structure so as to output vibrations corresponding to the folding axis.

Electronic device comprising haptic actuator

An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.

Optical phase shifter and optical switch device using ferroelectric material

A method for manufacturing a semiconductor device according to embodiments may include forming a sacrificial layer on a first substrate including first dopant atoms and second dopant atoms, and forming a germanium (Ge) layer on the sacrificial layer. Here, the germanium (Ge) layer may include the first dopant atoms diffused from the first substrate by growth temperature in the forming step. Additionally, the method for manufacturing a semiconductor device may further include annealing after growth of the germanium (Ge) layer so that the germanium (Ge) layer may include second dopant atoms.

Semiconductor device using inter-diffusion and method for manufacturing the same

A method for optical interconnection between semiconductor chips according to an embodiment include converting an electrical signal to an optical signal, transmitting the optical signal to a second substrate disposed above or below a first substrate using an optical transmitter provided on the first substrate, receiving the optical signal using an optical detector provided on the second substrate, and converting the received optical signal to an electrical signal. Accordingly, using a mid-infrared wavelength range of light that is transparent to semiconductor materials such as silicon and next-generation high-mobility materials, it is possible to enable interconnection between stacked semiconductor chips without using metal wiring. Using optical interconnection, it is possible to significantly reduce the bandwidth and power consumption, and overcome the limitations of TSV technology, and it is possible to extend the photonics technology and platform established in the existing Si Photonics, thereby reducing the cost required for design.

Method for optical interconnection between semiconductor chips using mid-infrared

Disclosed is a semiconductor device, which includes: forming a first channel layer including a Group III-V compound or germanium (Ge) and having a first semiconductor characteristics on a first substrate; forming a second channel layer including a Group III-V compound or germanium (Ge) and having a second semiconductor characteristics different from the first semiconductor characteristics on the first channel layer; forming a bonding layer containing an oxide on a second channel layer; allowing the bonding layer to be bound to the second substrate so that a structure including the bonding layer, the second channel layer, the first channel layer and the first substrate may be stacked on the second substrate; removing the first substrate stacked on the second substrate; and removing the first channel layer from a partial region of the structure stacked on the second substrate.

Method for manufacturing a semiconductor device with horizontally aligned semiconductor channels

The present invention relates to a power conversion device and an air conditioner comprising the same. The power conversion device may include: an interleaved boost converter; a dc terminal capacitor; a load; and a controller for controlling the interleaved boost converter, wherein the controller controls the phase difference between a first boost converter and second boost converter of the interleaved boost converter so that the phase difference is a first phase difference in a first mode, and if a current ripple flowing in the dc terminal capacitor is a predetermined value or greater, the controller enters a second mode and controls the phase difference between the first boost converter and second boost converter so that the phase difference varies. Accordingly, the ripple current flowing into a capacitor disposed at the output terminal of an interleaved boost converter can be reduced.

Power conversion device and air conditioner comprising same

A method for manufacturing a semiconductor device includes: forming a sacrificial layer on a first substrate, the sacrificial layer being made of a material whose lattice constant is different from that of germanium (Ge) by a preset threshold or below; forming a germanium (Ge) layer on the sacrificial layer; forming an insulation layer on a second substrate; bonding the germanium (Ge) layer onto the insulation layer; and removing the sacrificial layer and the first substrate by etching the sacrificial layer in a state where the germanium (Ge) layer is bonded to the insulation layer. In this method, a germanium-on-insulator (GeOI) structure having various surface orientations may be formed by means of epitaxial lift-off (ELO), and a strain may be applied to the germanium (Ge) layer using a lattice constant of the sacrificial layer.

Semiconductor device including strained germanium and method for manufacturing the same

Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO) thin film in monoclinic VOcrystal phase by deposition of VOon oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VOthin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.

Thin film structure for micro-bolometer and method for fabricating the same

A circuit and a system may drive switching modules. The driving circuit and system are capable of controlling a detection level of a protection voltage of a switching module, by controlling a voltage of a detection circuit for detecting the protection voltage. This may be done based on control of a variable resistance.

Circuit and system for driving switching modules

Provided are a power converting system and a power converting apparatus, which include an input unit that receives a direct current (DC) voltage from an external power source, a conversion unit including a plurality of switching circuits that convert the input DC voltage into a multi-phase AC voltage, a resonant unit including a single resonant inductor connected to each of the plurality of switching circuits, and an output unit that rectifies each phase of the multi-phase AC voltage which has been converted in the plurality of switching circuits and outputs a single DC voltage.

Growing community of inventors

Seoul, South Korea

Sanghyeon Kim