Skhynix Inc.

Sanghun Lee

Yong Soo Choi

There is disclosed a resistance change memory device according to an aspect of the present disclosure. The resistance change memory device includes a first electrode layer and a second electrode layer that are disposed to be spaced apart from each other, and a resistance change material layer disposed between the first and second electrode layers and including an amorphous carbon structure. The resistance change material layer includes an impurity element adhering to the amorphous carbon structure, and the impurity element has a concentration gradient along a thickness direction of the resistance change material layer.

Resistance change memory device having amorphous carbon structure and method of manufacturing the same

A resistance change device according to an embodiment of the disclosure includes a first electrode, a resistance switching layer disposed on the first electrode, a second electrode disposed on the resistance switching layer, a ferroelectric layer disposed on the second electrode, and a third electrode disposed on the ferroelectric layer.

Resistance change device having electrode disposed between resistance switching layer and ferroelectric layer

A nonvolatile memory device according to one embodiment includes a ferroelectric memory element and a resistive memory element. The ferroelectric memory element includes a field effect transistor having a ferroelectric gate dielectric layer. The resistive memory element includes a resistance change memory layer disposed between a first memory electrode and a second memory electrode. A drain electrode of the field effect transistor is connected to the first memory electrode or second memory electrodes.

Nonvolatile memory device including ferroelectric memory element and resistive memory element, and method of operating nonvolatile memory device

A resistance change memory element includes a lower electrode, a variable resistive layer disposed on the lower electrode and configured to include an oxygenated carbon structure, a barrier layer disposed on the variable resistive layer and configured to include an oxygen containable material that is able to be reversibly oxidized and reduced, and an upper electrode disposed on the barrier layer.

Resistance change memory devices

A ferroelectric memory device includes a first electrode layer disposed on a substrate, a first tunnel barrier layer disposed on the first electrode layer, a second electrode layer disposed on the first tunnel barrier layer, a second tunnel barrier layer disposed on the second electrode layer, and a third electrode layer disposed on the second tunnel barrier layer. Any one of the first and second tunnel barrier layers includes a ferroelectric material.

Ferroelectric memory device and cross-point array apparatus including the same

A ferroelectric memory device is disclosed. The ferroelectric memory device includes a substrate, an indium-gallium-zinc oxide layer disposed on the substrate, a ferroelectric material layer disposed on the indium-gallium-zinc oxide layer, a gate electrode layer disposed on the ferroelectric material layer, and a source electrode layer and a drain electrode layer that are disposed the ends of the gate electrode. The indium-gallium-zinc oxide layer is recessed to form a trench at the ends of the gate electrode. The trench is filled with a conductive material to form the source electrode layer and the drain electrode layer.

Nonvolatile memory device

A resistance change memory device includes a lower electrode, a ferroelectric material layer disposed on the lower electrode, a resistance switching material layer disposed on the ferroelectric material layer, and an upper electrode disposed on the resistance switching material layer.

Growing community of inventors

Icheon-si, South Korea

Sanghun Lee