Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Sanghoon Yoo

Wonhee Lee

Jungchul Lee

Wan-Soo Choi

Chul-Kyu Kim

Hee Yeon Tak

Ryunmin Heo

Chanwoong Na

Jaejoon Shim

A memory storage device is provided. The memory storage device includes: a memory device including a plurality of blocks, the plurality of blocks including a first block which includes a plurality of sub-blocks; and a memory controller configured to, based on use amount differences among the plurality of sub-blocks being greater than a threshold value, increase a use amount of a low use sub-block that has a small use amount from among the plurality of sub-blocks of the first block. The plurality of sub-blocks of the respective blocks are stacked in a direction perpendicular to a substrate of the memory device.

Memory storage device and wear leveling method thereof

A method of forming an electrode, an electrode for a solar cell manufactured, and a solar cell, the method including forming a pattern of a finger electrode by: coating a composition for forming a first electrode that includes a conductive powder, an organic vehicle, and a first glass frit that is free of silver and phosphorus, and drying the coated composition for forming a first electrode; forming a pattern of a bus electrode by: coating a composition for forming a second electrode that includes a conductive powder, an organic vehicle, and a second glass fit that includes silver and phosphorus, and drying the coated composition for forming a second electrode; and firing the resultant patterns.

Method of forming electrode, electrode manufactured therefrom and solar cell

Growing community of inventors

Suwon-si, South Korea

Sanghoon Yoo