Samsung Electronics Co., Ltd.

Sanghoon Song

Junyoung Lee

Yoonyoung Choi

Youn-Gun Jung

Munhee Jang

Youngjun Cho

Yongsung Kim

Changseung Lee

Joonyong Park

Dongho Kim

Kyungwook Hwang

Jooho Lee

Junsik Hwang

Sungjin Lim

Wooyoung Yang

Jeongyub Lee

Byonggwon Song

Kiyeon Yang

Youngtek Oh

Jaekwan Kim

Yongjun Cho

Minchul Yu

A semiconductor chip wet transfer method includes: preparing a transfer substrate that includes a plurality of recesses; supplying a liquid that includes semiconductor chips onto the plurality of recesses of the transfer substrate; aligning the semiconductor chips in the plurality of recesses by sweeping, with an align bar, an upper surface of the transfer substrate supplied with the liquid; and performing cleaning by removing semiconductor chips that are not aligned in the plurality of recesses by using a first magnetic force generating device disposed facing a lower surface of the transfer substrate.

Chip wet transfer method and equipment using magnetic force

A method of forming a lithium (Li)-based film, may include: supplying a Li source material into a reaction chamber in which a substrate is disposed; supplying phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; and generating plasma in the reaction chamber to form a Li-based film on the substrate from the Li, P, O, and N source materials, wherein the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber are performed with a time interval, and wherein the Li source material supplied into the reaction chamber is deposited on the substrate, and the P and O source materials supplied into the reaction chamber are adsorbed on the Li source material.

Plasma-enhanced chemical vapor deposition method of forming lithium-based film by using the same

Mobile phone

A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.

Meta-optical device and method of manufacturing the same

Growing community of inventors

Gumi-si, South Korea

Sanghoon Song