The Penn State Research Foundation

Foveon, Inc.

Qualcomm Incorporated

Sanghoon Bae

Stephen J Fonash

Rastislav Lukac

Daniel Hayes

Shri Ramaswami

Kostadin Dimitrov Djordjev

David William Burns

Samir Kumar Gupta

Nicholas Ian Buchan

Joseph D Cuiffi

Leonard Eugene Fennell

Ali Kaan Kalkan

Wook Jun Nam

Youngchul Lee

A Kaan Kalkan

Stephan J Fonash

Kyuhwan Chang

A pixel sensor array includes a plurality of pixel sensors having a first gain and a plurality of pixel sensors having a second gain less than the first gain.

Imaging array having photodiodes with different light sensitivities and associated image restoration methods

Various techniques and apparatuses are disclosed that provide for pixelated display modules that integrate an ultrasonic fingerprint or biometric sensing capability. In some implementations, the ultrasonic fingerprint sensor and the display components of the display module may share a common backplane. In some implementations, the ultrasonic fingerprint sensor may share a flex cable with other components in the display module. In some implementations, the ultrasonic fingerprint sensor may leverage conductive traces on a cover glass used to provide for touch input to the display module.

Display with peripherally configured ultrasonic biometric sensor

This invention uses large surface to volume ratio materials for separation, release layer, and sacrificial material applications. The invention outlines the material concept, application designs, and fabrication methodologies. The invention is demonstrated using deposited column/void network materials as examples of large surface to volume ratio materials. In a number of the specific applications discussed, it is shown that it is advantageous to create structures on a laminate on a mother substrate and then, using the separation layer material approach, to separate this laminate from the mother substrate using the present separation scheme. It is also shown that the present materials have excellent release layer utility. In a number of applications it is also shown how the approach can be used to uniquely form cavities, channels, air-gaps, and related structures in or on various substrates. Further, it is demonstrated that it also can be possible and advantageous to combine the schemes for cavity formation with the scheme for laminate separation.

Deposited thin films and their use in separation and sacrificial layer applications

The present invention is directed to the use of deposited thin films for chemical or biological analysis. The invention further relates to the use of these thin films in separation adherence and detection of chemical of biological samples. Applications of these thin films include desorption-ionization mass spectroscopy, electrical contacts for organic thin films and molecules, optical coupling of light energy for analysis, biological materials manipulation, chromatographic separation, head space adsorbance media, media for atomic molecular adsorbance or attachment, and substrates for cell attachment.

Deposited thin films and their use in detection, attachment and bio-medical applications

A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250&deg; C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.

Deposited thin film void-column network materials

The method of the invention induces crystallization in an amorphous semiconductor layer, and includes the steps of: a) producing a patterned metal layer on a first substrate, the metal layer exhibiting a weak level of adherence to the first substrate; b) pressing the metal layer into physical contact with the amorphous semiconductor layer; c) applying heat, light or both to the metal layer and amorphous semiconductor layer to cause a reaction therebetween and a crystallization of the amorphous semiconductor that is juxtaposed to the metal.

Metal-contact induced crystallization in semiconductor devices

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San Jose, CA, United States of America

Sanghoon Bae