Seagate Technology Incorporated

Sangho Kim

Daniel Sullivan

First and second anchor features are formed on a photolithography mask, each having a respective center point. An elongated, chromeless, bridging feature is formed between the anchor features. The bridging feature is offset from the center points of the anchor feature to minimize distortions of a corresponding photoresist feature formed by the bridging feature.

Forming a bridging feature using chromeless phase-shift lithography

First and second anchor features are formed on a substrate via a chromeless photolithography process. An elongated bridging feature is formed between the anchor features on the substrate via the chromeless photolithography process. A distance between the anchor features is sufficient to minimize lateral displacement at a center portion of the bridging feature without significant reduction in mechanical stability of the bridging feature.

An elongated, chromeless, bridging feature is formed on a photolithography mask with an etching depth that causes a nominal phase difference of more than 180 degrees to energy passing through the photolithography mask. A corresponding photoresist feature is formed using the bridging feature. The phase difference may be chosen to minimize dimensional variation of the corresponding photoresist feature.

Growing community of inventors

Saint Paul, MN, United States of America

Sangho Kim