Electronics and Telecommunications Research Institute

Sanghan Lee

Sang-Kyung Yoo

Moon-Seok Kim

Seok Hee Ryu

Bong Soo Lee

Sangwook Lee

Rae Lee

Junki Kang

Dongwoo Shin

Disclosed herein are a method for secure booting using a route switchover function for a boot memory bus and an apparatus using the same. The method includes maintaining a reset state in order to prevent a processor from being booted, interrupting the connection between the processor and boot memory, verifying the integrity of first boot firmware stored in the boot memory, determining whether hardware damage is detected, and releasing the reset state of the processor and the interrupted state of the connection between the processor and the boot memory in consideration of whether hardware damage is detected and verification of the integrity in order to allow the processor to be booted.

Method for secure booting using route switchover function for boot memory bus and apparatus using the same

An apparatus and method that prevent a bit error in a static random access memory (SRAM)-based Physically Unclonable function (PUF). The method for preventing an error in a PUF includes selecting any value, from a physically unclonable function based on a volatile memory device, as an input value, and checking a response corresponding to the selected input value, classifying cells having a plurality of bits corresponding to the response depending on frequency of error occurrence, calculating a number of white cells, in which an error does not occur, from classified results, and determining whether the number of white cells is greater than a preset threshold number of white cells, and selecting an input value of the physically unclonable function based on results of determination.

Apparatus and method for preventing error in physically unclonable function

A method and apparatus for controlling the operation of flash memory are provided. The apparatus for controlling the operation of flash memory includes a control unit and a voltage adjustment unit. The control unit outputs a control signal adapted to change one or more of the program, erase and read voltage conditions for the flash memory to the voltage adjustment unit in response to the input of a PUF mode selection signal. The voltage adjustment unit changes the one or more of the program, erase and read voltage conditions for the flash memory in response to the input of the control signal.

Method and apparatus for controlling operation of flash memory

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Daejeon, South Korea

Sanghan Lee