Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

SangGul Lee

Chan Young Park

JeongKweon Park

SangEun Han

HeungJu Jo

IkHyun Kuon

YongMin Ha

SangHee Yu

Jonghoon Yi

MoonGoo Kim

Moongoo Kim

Yongsoo Kim

YunMi Lee

Doowon Seo

Sungwook Park

YongSoo Kim

SungNam Byun

Juyeob Lee

SoonBum Shin

Bogyung Kang

Changmin Pyo

SungHyun Cho

Hoon Choi

Jangcheol Kim

NamSu Kim

SungSoo Shin

Youngjin Yi

SangWoon Kim

YeonTaek Yoo

WonSang Ryu

Do-Young Kim

SukHo Cho

EuiJun Lee

Hyunwoo Cho

Yubeen Lim

Wooseok Roh

GwangTae Kim

HyunJin Shin

HwaChun Lim

A manufacturing apparatus is configured to bond a display panel to a cover window having a flat portion between a first curvature portion and a second curvature portion. The manufacturing apparatus comprises a first attachment portion configured to press a first adhesive surface of the display panel to the flat portion of the cover window, and a 3D attachment portion configured to press a first edge adhesive surface and a second edge adhesive surface of the display panel to the first curvature portion and the second curvature portion of the window, respectively, and not press the first adhesive surface of the display panel.

Display apparatus, structure and manufacturing apparatus of flexible display apparatus

A display apparatus includes a first pixel driving circuit, an electric field blocking layer on the first pixel driving circuit, a second pixel driving circuit on the electric field blocking layer, and a first display element and a second display element on the second pixel driving circuit, wherein each of the first pixel driving circuit and the second pixel driving circuit includes at least one thin film transistor, the first pixel driving circuit overlaps with the second pixel driving circuit, the first display element is connected with the first pixel driving circuit, and the second display element is connected with the second pixel driving circuit.

Display apparatus comprising overlapped pixel driving circuits

Provided is a display device. The display device includes a flexible substrate comprising an active area, and a non-active area surrounding a border of the active area; a thin-film transistor and a light-emitting element on the active area; an encapsulation unit over the thin-film transistor and the light-emitting element; a hole formed in the active area by removing a portion of the flexible substrate; a first common layer disposed on a side surface of the hole, extended from the light-emitting element and comprising same elements with the light-emitting element; and a tip protruding from the side surface of the hole. The first common layer disposed adjacent to the tip is disconnected from the light-emitting element.

Display device and method for fabricating the same

A flexible electroluminescent display device can include a flexible substrate including an active area and a bending area extending from one side of the active area to be bent; a thin film transistor and a light emitting diode on the active area; a touch screen panel on the active area; a touch circuit board connected to the touch screen panel and bent at an outer periphery of the bending area of the flexible substrate; a polarizer disposed on the touch screen panel and covering a portion of the touch circuit board; and a step compensating layer disposed between the touch screen panel and the polarizer, the step compensating layer compensates a step between the touch screen panel and the touch circuit board.

Flexible electroluminescent display device

In an exemplary embodiment of the present disclosure, a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a non-pixel area of a substrate includes a first insulating layer that insulates the gate electrode from the source electrode and the drain electrode, and a second insulating layer that covers the source electrode and the drain electrode. According to an exemplary embodiment of the present disclosure, the first insulating layer and the second insulating layer are configured so as not to be extended to a pixel area of the substrate in order to reduce possible oscillation of transmittance depending on a viewing angle which occurs when a specific light of a light source passes through the pixel area.

Thin film transistor and display device

A flexible display device can include a first portion in which an organic light emitting element is disposed on a first surface; a base layer made of a flexible substrate including a second portion, outside of the first portion, having a bend section bent toward a second surface opposite to the first surface; and a protective coating layer covering at least a part of the second portion, wherein a polarization layer is on the organic light emitting element of the first portion without a barrier film, and wherein the protective coating layer is coated such that a portion adjacent to the polarization layer is thicker than the other portion.

Flexible display including protective coating layer having different thickness in bend section

Discussed is a display device in which a first pressure electrode configuring a pressure touch panel is adhered to a first polarizing film attached on a lower end of a panel. The display device includes a display panel displaying an image, a capacitive touch panel provided in the display panel and including a plurality of touch electrodes, a first polarizing film adhered to a first side surface of the display panel, a first pressure electrode part adhered to a first side surface of the first polarizing film and including a first pressure electrode, and a second pressure electrode part spaced apart from the first pressure electrode part and including a second pressure electrode facing the first pressure electrode.

Display device

A display device according to an embodiment includes a lower substrate in which a display area and a non-display area are divided and an upper substrate which corresponds to the lower substrate and includes a black matrix BM. Further, the display device can include a bezel which is located on the non-display area and includes a GIP driver, a plurality of signal transmission lines, a connection line connecting the GIP driver and the plurality of signal transmission lines, and a seal area equipped with a sealant, in a direction being apart from one side of the display area, a plurality of bridge patterns which is located on the non-display area and electrically connects the GIP driver and the connection line, and the connection line and the plurality of signal transmission lines, respectively, and a plurality of shield patterns enclosing the plurality of bridge patterns. Also, the display device can include a plurality of shield patterns which minimize an area in which the sealant and the plurality of bridge patterns are in directly contact with each other.

Narrow bezel display device

The present invention relates to a method of crystallizing a silicon film, a thin film transistor, and a fabricating method thereof using the same. More particularly, the present invention relates forming a crystalline silicon film by crystallizing a silicon film using laser energy, and a thin film transistor and a fabricating method thereof using the same. The present invention includes forming a buffer layer on a substrate and forming an amorphous silicon film on the buffer layer wherein the amorphous silicon film includes a first region and second regions connected to both ends of the first region. The buffer layer is etched to a degree by using the amorphous silicon as a mask, wherein a space is formed under the first region and a central part of the second region contacts a remaining portion of the buffer layer. The amorphous silicon film is then crystallized. In another aspect, the present invention includes a method of fabricating a thin film transistor using this method of crystallizing an amorphous silicon film.

Method of crystallizing a silicon film and thin film transistor and fabricating method thereof using the same

The present invention discloses a polycrystalline silicon thin film transistor connected to a gate line and a data line, including a source electrode contacting the data line; a gate electrode contacting the gate line; a drain electrode spaced apart from the source electrode; a polysilicon layer having upper and lower surfaces, the lower surface having a contacting area and a noncontacting area, the polysilicon layer being positioned between and contacting the source and the drain electrodes, and acting as a channel in which electrons flow; and a buffer layer positioned under the polysilicon layer, the buffer layer having a supporting portion, the supporting portion supporting the lower surface of the polysilicon layer through the contact area of the lower surface of the polysilicon layer, thereby forming a space between the buffer layer and the noncontacting area of the lower surface of the polysilicon layer.

Polycrystalline silicon thin film transistor and manufacturing method thereof

Growing community of inventors

Seoul, South Korea

SangGul Lee