Samsung Electronics Co., Ltd.

Sangdon Lee

Jiwon Kim

Sukkang Sung

Jong-Min Lee

Sung-Min Hwang

Jaeho Kim

Joonsung Kim

Sungmin Hwang

Euntaek Jung

A semiconductor device includes an electrode structure including electrodes stacked on a substrate and an insulating pattern on an uppermost electrode of the electrodes, a vertical structure that penetrates the electrode structure and is connected to the substrate, a first insulating layer on the electrode and the vertical structure, a conductive pattern that penetrates the first insulating layer and is connected to the vertical structure, an upper horizontal electrode on the conductive pattern, and an upper semiconductor pattern that penetrates the upper horizontal electrode and is connected to the conductive pattern. The conductive pattern has a first side surface on the vertical structure and a second side surface on the insulating pattern.

Semiconductor device including separate upper channel structures and electronic system including the same

A semiconductor device includes a stack structure, first separation patterns passing through the stack structure, a second separation pattern passing through at least a portion of the stack structure between the first separation patterns, and a cutting channel structure passing through the stack structure and having an end portion partially cut by the second separation pattern. A channel layer of the cutting channel structure has a ring shape cut by the second separation pattern to have end portions of the channel layer which are spaced apart from each other.

Semiconductor devices and data storage systems including the same

Disclosed are a three-dimensional semiconductor memory device and an electronic system including the same. The device includes a substrate, a cell array structure provided on the substrate to include a plurality of stacked electrodes spaced apart from each other, an uppermost one of the electrodes being a first string selection line, a vertical channel structure provided to penetrate the cell array structure and connected to the substrate, a conductive pad provided in an upper portion of the vertical channel structure, a bit line on the cell array structure, a bit line contact electrically connecting the bit line to the conductive pad, and a cutting structure penetrating the first string selection line. The cutting structure penetrates a portion of the conductive pad. A bottom surface of the bit line contact includes first and second bottom surfaces in contact with the conductive pad and the cutting structure, respectively.

Semiconductor device and electronic system including the same

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Hwaseong-si, South Korea

Sangdon Lee