Samsung Electronics Co., Ltd.

Sangdo Park

Duk Jin Oh

Hyosun Hwang

Kaeweon You

Jun Seomun

Bonghyun Lee

Hyungock Kim

Dayeon Cho

Sungok Lee

Wootae Kim

Jaewan Yang

Yongcheul Kim

SungOk Lee

Jooyeon Kwon

Dongkee Sohn

Semiconductor devices may include standard cells arranged in a first direction and a second direction intersecting the first direction. Both the first and second directions may be parallel to an upper surface of the substrate. Each of the standard cells may include semiconductor elements. The semiconductor device may also include filler cells between two standard cells, and each of the filler cells may include a filler active region and a filler contact connected to the filler active region and may extend in the first direction. The semiconductor device may further include a lower wiring pattern electrically connected to at least one of the semiconductor elements and may extend into at least one of the filler cells in the second direction, and the filler contacts may include wiring filler contacts lower than the lower wiring pattern and connected to at least one of the lower wiring pattern.

Semiconductor devices and methods of manufacturing the same

A semiconductor device includes standard cells in a first direction parallel to an upper surface of a substrate and a second direction intersecting the first direction, and filler cells between ones of the standard cells. Each of the standard cells includes an active region, a gate structure that intersects the active region, source/drain regions on the active region on both sides of the gate structure, and interconnection lines. Each of the filler cells includes a filler active region and a filler gate structure that intersects the filler active region. The standard cells include first to third standard cells in first to third rows sequentially in the second direction, respectively. First interconnection lines are arranged with a first pitch, second interconnection lines are arranged with a second pitch, and third interconnection lines are arranged with a third pitch different from the first and second pitches.

Semiconductor devices

An integrated circuit (IC) includes: a first cell including an input pin and an output pin extending in a first direction; a second cell adjacent to the first cell in the first direction and including an input pin and an output pin extending in the first direction; a first cell isolation layer extending between the first cell and the second cell in a second direction crossing the first direction; and a first wire extending in the first direction, overlapping the first cell isolation layer, and being connected to the output pin of the first cell and the input pin of the second cell, wherein the output pin of the first cell, the input pin of the second cell, and the first wire are formed in a first conductive layer as a first pattern extending in the first direction.

Integrated circuit including simple cell interconnection and method of designing the same

Disclosed are a semiconductor device and a method of fabricating the same. The method includes placing a standard cell, resizing a power via pattern in such a way that the power via pattern has a different width from a width of other via pattern, and applying different design rules to the power via pattern and the other via pattern, respectively, to perform a routing operation on the standard cell.

Semiconductor device and method of fabricating the same

An integrated circuit includes a standard cell continuously arranged on a first row and on a second row, the first row and second row extending parallel with each other in a first direction, the first row and the second row adjacent to each other in a second direction crossing the first direction, a first cell separator contacting a first row boundary of the standard cell on the first row and extending in the second direction, and a second cell separator contacting a second row boundary of the standard cell on the second row and extending in the second direction. The first cell separator and the second cell separator are discontinuous on a first row to second row boundary of the first row and the second row.

Integrated circuit including multiple height cell and method of designing the same

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Yongin-si, South Korea

Sangdo Park