Samsung Electronics Co., Ltd.

Sangchul Yang

Seungjin Kim

Jeon Il Lee

Hoin Lee

Jung-Bum Lim

A semiconductor device includes a vertical stack of ring-shaped electrodes that are electrically connected together into a top electrode of a capacitor, on a semiconductor substrate. A bottom electrode of the capacitor is also provided, which extends vertically in a direction orthogonal to a surface of the substrate and through centers of the vertical stack of ring-shaped electrodes. An electrically insulating bottom supporting pattern is provided, which extends between a lowermost one of the ring-shaped electrodes and an intermediate one of the ring-shaped electrodes.

Growing community of inventors

Hwaseong-si, South Korea

Sangchul Yang