Samsung Electronics Co., Ltd.

Sangcheol Na

Kichul Park

Anthony Dongick Lee

Jinnam Kim

Hoonjoo Na

Rakhwan Kim

YoungWoo Cho

KyoungWoo Lee

Juyoung Jung

Yoonsuk Kim

Eunji Jung

Doohwan Park

Sungyup Jung

A semiconductor device includes a substrate. A wiring layer is over the substrate. A first via structure directly contacts a lower portion of the wiring layer. A second via structure directly contacts an upper portion of the wiring layer. The first via structure generates first stress in the wiring layer. The second via structure generates second stress in the wiring layer. The second stress is of an opposite type to the first stress. The first stress and the second stress compensate for each other in the wiring layer.

Semiconductor device including via structure

A semiconductor device including a first insulating structure on a substrate and including a first etch stop layer and a first interlayer insulating layer on the first etch stop layer, a second insulating structure on the first insulating structure and including a second etch stop layer and a second interlayer insulating layer on the second etch stop layer, a conductive line penetrating through the second insulating structure, and extending in a first direction parallel to an upper surface of the substrate, and a plurality of contacts penetrating through the first insulating structure and connected to the conductive line may be provided. The conductive line may include a protrusion extending below the second insulating structure and penetrating through the first interlayer insulating layer to be in contact with the first etch stop layer.

Semiconductor devices

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Seoul, South Korea

Sangcheol Na