Samsung Electronics Co., Ltd.

Sangbeom Kang

Hojung Kim

Jongpil Son

Magnetic devices and methods of fabricating the same are provided. According to the magnetic device, a tunnel barrier pattern is interposed between a first magnetic pattern and a second magnetic pattern. An edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern. The central portion of the tunnel barrier pattern has a substantially uniform thickness.

Magnetic devices and methods of fabricating the same

The variable resistance memory device may include a memory cell array including a plurality of memory blocks, a bit line selection circuit including a plurality of bit lines connected to the plurality of memory blocks, at least one readout Y-pass driver configured to control a connection of the bit line selection circuit when a readout operation is performed, and a write Y-pass driver configured to control a connection of the bit line selection circuit when a write operation is performed. The write Y-pass driver is configured to control at least two of the plurality of bit lines connections.

Growing community of inventors

Hwaseong-si, South Korea

Sangbeom Kang