Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Seoul National University

Skhynix Inc.

Kumoh National Institute of Technology Industry-academic Cooperation

University of California

Leland Stanford Junior University

Yonsei University

Samsung Mobile Display Co., Ltd.

Industry-academic Cooperation Foundation

Sang-Yoon Lee

Myung-Kwan Ryu

Kyung-bae Park

Tae-sang Kim

Jong-Baek Seon

Jang-yeon Kwon

Ji-sim Jung

Kyoung-seok Son

Hyun-Suk Kim

Seung-hoon Han

Jae-young Choi

Eun Kyung Lee

Hong-seok Lee

Jong-Man Kim

In-Seo Kee

Joo Young Kim

Deog-Kyoon Jeong

Suhwan Kim

In-kyeong Yoo

Sang-woo Kim

Hong-shik Shim

Hyun-Jae Kim

Bang Lin Lee

Hyun-Soo Shin

Jung Seok Hahn

Hoon Song

Zhenan Bao

Myeong-Suk Kim

Je-Hun Lee

Alan J Heeger

Sung-Hun Lee

Moon Gyu Han

Sang-Woo Kim

Chang-seung Lee

Hyeon-jin Shin

Eun Jeong Jeong

Seon-mi Yoon

Mi-jeong Song

Jong-Jin Park

Sang-Myeon Han

Yong-wan Jin

Yoon-sun Choi

Jae-cheol Lee

Min-Koo Han

Kwanghee Lee

Bon Won Koo

Jung-mok Bae

Kook Min Han

In-Kyeong Yoo

Kyung-Seok Son

Kyung-Bae Park

Jang-Yeon Kwon

Joon-seok Park

Byung-wook Yoo

Sun-kook Kim

Seok-jun Seo

Jeong-il Park

Sun-Jae Kim

Kwang-hee Lee

Byung-Du Ahn

Do-hwan Kim

Woong-Hee Jeong

Woong Il Choi

Alexander Victorovich Morozov

Tae-Yong Noh

Kwang-Hee Lee

Euk-che Hwang

Gun-Hee Kim

Kyu-hwan Choi

Do-Hwan Kim

Ji-Sim Jung

Eok-su Kim

Bon-Won Koo

Chang-Ho Hyun

Wan-joo Maeng

Joo-Hyung Chae

Jun-seong Kim

Duk-hyun Choi

Tae-Sang Kim

Eun-jeong Jeong

Won-mook Choi

Kyu Yeol In

Kyoung-seok Pyun

Ji Youl Lee

Vladislav Vladimirovich Druzhin

Andrew Putilin

Moon-gyu Han

Bang-lin Lee

Ivan Bovsunovskiy

Hong-Seok Lee

Sang-yoon Oh

Shinuk Cho

Sung Heum Park

Joon-Seok Park

Jong-Won Chung

Byung-Wook Yoo

Chul-sung Choi

Gaurav Giri

Stefan Mannsfeld

Kyoung-Seok Son

A data receiving circuit may include: a variable delay circuit suitable for generating a delayed strobe signal by delaying a strobe signal; a receiving circuit suitable for sampling data in synchronization with the delayed strobe signal; a phase shift circuit suitable for generating a shifted strobe signal by shifting a phase of the delayed strobe signal; a phase comparison circuit suitable for comparing phases of the data and the shifted strobe signal; and a delay adjusting circuit suitable for adjusting a delay value of the variable delay circuit in response to the phase comparison result of the phase comparison circuit.

Data receiving circuit

A data receiver circuit may include: a delay circuit suitable for delaying first and second strobe signals and generating delayed first and second strobe signals; a first receiver circuit suitable for sampling data in synchronization with the delayed first strobe signal; a second receiver circuit suitable for sampling the data in synchronization with the delayed second strobe signal; an enable signal generation circuit suitable for generating an enable signal indicating whether the data transitioned; a transition level generation circuit suitable for generating a transition level signal indicating a transition direction of the data; a phase shift circuit suitable for shifting the phase of the delayed first strobe signal by a set degree and generating a shifted first strobe signal; a sampling circuit suitable for sampling the data in synchronization with the shifted first strobe signal and generating a sampling result; and a control logic suitable for changing a delay value of the delay circuit in response to the transition level signal and the sampling result of the sampling circuit, when the enable signal is activated.

Data receiver circuit

An acousto-optic device capable of increasing a range of a diffraction angle of output light by using a nanostructured acousto-optic medium, and an optical scanner, an optical modulator, a two-dimensional/three-dimensional (2D/3D) conversion stereoscopic image display apparatus, and a holographic display apparatus using the acousto-optic device. The acousto-optic device may include a nanostructured acousto-optic medium formed by at least two different mediums repeatedly alternating with each other, wherein at least one of the at least two different mediums includes an acousto-optic medium. The acousto-optic device having the aforementioned structure may increase the range of a diffraction angle of output light. Thus, various systems such as the optical scanner, the optical modulator, the 2D/3D conversion stereoscopic image display apparatus, and the holographic display apparatus may not require a separate optical system to increase an operational angle range, thereby decreasing a size of the system and/or improving a resolution of the system.

Nanostructured acousto-optic device, and optical scanner, optical modulator, and holographic display apparatus using the nanostructured acousto-optic device

A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process.

Light emitting device and method of fabricating the same

Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors

Display screen or portion thereof with icon

Display screen or portion thereof with animated graphical user interface

A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.

Solution composition for forming oxide semiconductor, and oxide semiconductor and electronic device including the same

An organic semiconductor device includes an organic semiconductor, an electrode electrically connected to the organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end.

Organic semiconductor device and method of manufacturing the same

A plasmonic modulator and an optical apparatus including the same are provided. The plasmonic modulator includes a first metal layer, and a second metal layer facing the first metal layer. The plasmonic modulator further includes a refractive index varying layer disposed between the first and second metal layers and including a varying refractive index, and an insulating nitride layer disposed between the refractive index varying layer and the first metal layer.

Plasmonic modulator and optical apparatus including the same

A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 &#x212b; to about 20,000 &#x212b; and a refractive index in a range of about 1.85 to about 2.0.

Method of preparing thin film, thin film, apparatus for preparing thin film, and electronic device including thin film

A hologram recording and reproducing apparatus including: a coherent light source; a beam splitter which splits a beam emitted from the coherent light source into a signal beam and a reference beam; a signal beam forming unit which modulates the signal beam split and directs the modulated signal beam onto a hologram recording medium; and a reference beam forming unit which directs the reference beam to be irradiated onto a location on the hologram recording medium which overlaps with a location on the hologram recording medium on which the signal beam is incident, wherein the signal beam forming unit includes: a first light guide member which transmits the signal beam split by the beam splitter; a spatial light modulator (SLM) which modulates the signal beam transmitted through the first light guide member; and a holographic Fourier transformation optical device which focuses the modulated signal beam onto the hologram recording medium.

Apparatus for recording and reproducing hologram

A light refraction controlling panel, a 3D-display, and a method of operating a 3D-display are provided. The light refraction controlling panel includes a transparent substrate, a barrier wall on the transparent substrate, first to fourth electrodes on the barrier wall, the first to fourth electrodes being separated from each other, an electro-wetting prism within the barrier wall, the electro-wetting prism being configured to refract incident light to a desired direction, and an isolation layer between the barrier wall and the first to fourth electrodes, and the electro-wetting prism. One electrode of two adjacent electrodes of the first to fourth electrodes is inside an other electrode of the two adjacent electrodes.

Light refraction controlling panel, 3D-display comprising the same, and method of operating the 3D-display

A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.

Transistor, method of manufacturing the same, and electronic device including transistor

Growing community of inventors

Seoul, South Korea

Sang-Yoon Lee