Samsung Electronics Co., Ltd.

Sang-yoon Jeon

Heung-bae Lee

Sung-jae Jung

Young-Eil Kim

Bum-Man Kim

Hee-Mun Bang

Ick-jin Kwon

Chun-deok Suh

Jin-soo Park

Hyung-sun Lim

Dong-Hyun Lee

Seong-soo Lee

Hoon-Tae Kim

Yun-seong Eo

Kwang-du Lee

Sung-Chul Hong

Sang-Woong Yoon

Sun-hee Park

Jinup Lim

Dae-ki Kim

Joongho Choi

Yong-Gyo Seo

Sang-Min Nam

Je-hyung Yoon

Chang-joon Park

Chong-ouk Kim

Ui-Sik Yoon

A radio frequency (RF) receiver and a method of receiving an RF signal are provided. The RF receiver includes a low-noise amplifying unit which amplifies a received signal while restricting out-of-band interference of the received signal, a sampling unit which performs sampling to convert the amplified signal to a discrete time domain signal, a frequency translation unit which down-converts the discrete time domain signal into a frequency band that enables the discrete time domain signal to be converted into a digital signal and restricts interference from a frequency within an aliasing band according to a sampling frequency, an anti-aliasing filtering unit which prevents aliasing from the down-converted signal, a clock unit which provides the sampling unit, the frequency translation unit, and the anti-aliasing filtering unit with sampling frequencies, and an analog-digital-converter which converts the converted signal into the digital signal.

RF receiver and method to receive, amplify, sample, down convert, anti-aliasing filter, and ADC convert an RF signal

A variable inductor is provided, which includes a first lead having both ends to receive a pair of difference signals, a second lead having both ends to receive a pair of the difference signals, and a switch selectively supplying a pair of the difference signals to the second lead by turning on/off according to a control signal. Accordingly, a variable inductor can be implemented that is compact and maximizes the variation rate of inductance.

Variable inductor

An N&#xd7;N multiple-input multiple-output (MIMO) transceiver is provided. The transceiver includes a plurality of transceivers, each including at least one transceiver circuit; an oscillation unit which is configured to generate a differential signal which is supplied to the at least one transceiver circuit; a plurality of buffers, which are mounted in a bypass line between the at least one transceiver circuit and the oscillation unit and are configured to amplify and bypass the differential signal or input and amplify the differential signal; and a buffer control unit which is configured to control the plurality of buffers to bypass or input the differential signal.

NxN multiple-input multiple-output transceiver

A low noise amplifier is provided. The low noise amplifier includes: a low noise amplifying unit amplifying an input signal; a harmonic and noise generating unit disposed in an input terminal of the low noise amplifying unit, for generating a compensating signal for compensating for an intermodulation distortion signal and a thermal noise signal of the input signal to the low noise amplifying unit; and a load unit outputting the amplified input signal generated by the low noise amplifying unit.

Low noise amplifier

Provided are an IC and a method for automatically tuning process and temperature variations. The IC includes: a test circuit unit including test circuit elements having identical element values and variations to a tuning-targeted circuit element and at least one reference circuit element having a smaller variation than the tuning-targeted circuit element; a comparator that obtains a difference between intensities of first and second signals detected from the test circuit unit; and a tuning unit that tunes the variation of the tuning-targeted circuit element according to the difference between the intensities of the first and second signals. Thus, process and temperature variations of a circuit element can be detected and accurately tuned with respect to the circuit element itself. Also, the process and temperature variations can be tuned inside an IC. Thus, the time required for tuning the process and temperature variations can be reduced.

Integrated circuit and method for automatically tuning process and temperature variations

Disclosed is a dual-band voltage-controlled oscillator using bias switching and output-buffer multiplexing. The dual-band voltage-controlled oscillator includes a power supply unit for supplying a source voltage; plural voltage-controlled oscillation units for outputting different oscillation frequencies according to controls of a certain tuning voltage; plural bias units for generating driving voltages for driving the voltage-controlled oscillation units and supplying the driving voltages to the voltage-controlled oscillation units; and plural buffers for selectively outputting oscillation frequencies of the plural voltage-controlled oscillation units. The present invention implements the dual-band voltage-controlled oscillator through bias switching and output-buffer multiplexing, which brings an advantage of elimination of interference between output frequencies to enhance phase noise characteristics.

Dual-band voltage-controlled oscillator using bias switching and output-buffer multiplexing

A method and a system for calibrating an input voltage of a voltage controlled oscillator and a digital interface used for calibrating the input voltage. The method includes: setting a lock detection time for tuning a signal phase; setting a lock detection voltage section; setting output frequency values at predetermine spacings; checking connection states of capacitors of the capacitor bank necessary for a lock of the output frequency values; storing information regarding the connection states of the capacitors in the output frequency values; and if one of the output frequency values is determined depending on a change of a channel, setting connection states of the capacitors according to the information regarding the connection state corresponding to the one frequency value. The capacitor bank includes: a predetermined number of capacitors having different capacitances and connected to one another in parallel; and switches connected to the capacitors in series.

Method and system for calibrating input voltage of voltage controlled oscillator and digital interface used for calibrating input voltage

A complementary metal oxide semiconductor voltage controlled oscillator is provided. The voltage controlled oscillator includes an LC tank which is supplied with a power supply voltage, the LC tank oscillating at a certain frequency; a negative resistor including first and second N-channel metal oxide semiconductor field effect transistors (NMOS FETs) to sustain the oscillation of the LC tank; a direct current block to remove a direct current component from the power supply voltage; an alternating current block to apply an alternating current voltage to the gates of the first and second NMOS FETs; a first current mirror including third and fourth NMOS FETs and allowing a current to symmetrically flow in the voltage controlled oscillator, a drain and the gate of the third NMOS FET being connected to a reference voltage supply; and the reference voltage supply applying a direct current voltage to the first current mirror.

Complementary metal oxide semiconductor voltage controlled oscillator

A dual gate cascade amplifier includes a first transistor and a second transistor electrically connected in series, the second transistor including a first parallel transistor and a second parallel transistor, the first parallel transistor and the second parallel transistor being electrically connected in parallel, a first channel electrically connecting a first end channel region of the first transistor and a second end channel region, wherein one of the first or second end channel regions is a source and the other of the first or second end channel regions is a drain, the second end channel region being a common end channel region shared by the first and second parallel transistors, and a second channel electrically connected to the second end channel region and extending away from the first transistor.

Dual gate cascade amplifier

A radio frequency voltage controlled oscillator (RF VCO) includes a differential oscillator including two field effect transistors (FETs) in which an electric current flows laterally to a substrate and a current source including a bipolar transistor in which the electric current flows in a direction either perpendicular or lateral to the substrate from an emitter to a collector via a base. Therefore, 1/f noise is very small. Resultantly, the RF VCO using the bipolar junction transistor as the current source reduces the 1/f noise generated by the current source of a RF CMOS VCO and, ultimately, the phase noise of the VCO.

Radio frequency voltage controlled oscillator

In a structure of a radio frequency (RF) variable capacitor having a variable range of capacitance between a first minimum value and a first maximum value, and a method of manufacturing the structure, the structure includes a first capacitor, which has a variable range of capacitance between a second minimum value greater than the first minimum value and a second maximum value greater than the first maximum value, and a second capacitor, which is connected in series to the first capacitor and has a capacitance of a fixed value. By the structure and method, a quality factor of a radio frequency (RF) variable capacitor may be increased without adding complex processing steps.

Structure of radio frequency variable capacitor and method of manufacturing the same

A differential type VCO (Voltage Controllable Oscillator) is disclosed. The VCO has a differential amplifier having a couple of transistors and a couple of LC tanks. At each LC tank, a transformer is connected to form a buffer. An oscillating signal is output through the buffer with no power consumption. Additionally, a capacitor is connected to the secondary coil of the transformer to form a bandpass filter, thereby attenuating a harmonic signal included in the oscillating signal.

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Seoul, South Korea

Sang-yoon Jeon