Samsung Electronics Co., Ltd.

Korea Institute of Industrial Technology

Sang-Yong Kim

Chang-ki Hong

Sang-jun Choi

Woo-Gwan Shim

Sang-Jin Hyun

Dong-Soo Lee

Jae-Jung Kim

Won-Keun Chung

Jin-Kyu Jang

Jae-won Jung

Jin-Ku Cho

Do-Hoon Lee

Ji-Hoon Cha

Bo-Ra Kim

Yu-Gyun Shin

Sang-Bom Kang

Kee-won Kim

Kun-Tack Lee

Hye-Lan Lee

Taek-Soo Jeon

Hag-Ju Cho

Bo Ra Kim

Yoon-Jong Song

Sang-hwan Park

Dae-Eun Jeong

Baek-Jin Kim

Sang-Hyeup Lee

Jae-Soung Lee

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Semiconductor devices

The present invention relates to a method for preparing a curable bicyclic compound derived from biomass. The method includes preparing starting materials furan and methyl acrylate by preparing furan from hemicellulose extracted from biomass, and methyl acrylate from glycerol generated from biomass, preparing an intermediate compound comprising a bicycle and an alcohol functional group by reacting the furan and the methyl acrylate through a Diels-Alder reaction and consecutive reduction, and preparing a curable bicyclic compound that includes the bicycle and an epoxide functional group by reacting the intermediate compound and epichlorohydrin.

Method for preparing curable bicyclic compound derived from biomass

A magnetic device includes a free layer including a first magnetization layer; a pinned layer including a second magnetization layer; and a tunnel barrier layer provided between the free layer and the pinned layer. At least one selected from the free layer and the pinned layer includes a synthetic antiferromagnetic (SAF) structure formed of a first ferromagnetic layer, a second ferromagnetic layer, and a ruthenium-rhodium (Ru&#x2014;Rh) alloy layer provided between the first and second ferromagnetic layers.

Magnetic device

Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.

Magnetic memory device and method for forming the same

The present disclosure relates to an acid catalyst composition for producing 5-chloromethyl-2-furfural from galactan derived from seaweed and a method for producing 5-chloromethyl-2-furfural from galactan derived from seaweed on a two component phase using the acid catalyst, the acid catalyst composition for producing 5-chloromethyl-2-furfural from galactan derived from seaweed including organic solvent and dilute hydrochloric acid, a concentration of the dilute hydrochloric acid being 4N to 8N (normal). According to the present disclosure, there is an advantage of converting 5-chloromethyl-2-furfural from galactan derived from seaweed by means of a single process by mixing dilute hydrochloric acid and organic solvent by an optimal ratio, unlike conventional methods for producing 5-chloromethyl-2-furfural that had to go through a multi-phase process of preconditioning and saccharification.

Method for preparing 5-chloromethyl-2-furfural using galactan derived from seaweed in two component phase

Disclosed is a method of preparing a petroleum-alternative bio fuel material such as 5-hydroxymethyl-2-furfural (HMF), 5-alkoxymethyl-2-furfural, levulinic acid alkil ester, etc. through a single process without saccharification, using a catalyst conversion reaction, from galactan that can be massively supplied at low costs and extracted from macroalgae of marine reusable resources. Thus, the macroalgae of the marine biomass resources is used so that a carbon source can be more easily extracted than that of a lignocellulosic biomass resource without a problem of having an effect on grain price like a crop-based biomass.

Method for producing biofuel using marine algae-derived galactan

A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

Transistor having a metal nitride layer pattern, etchant and methods of forming the same

A cleaning solution and methods of fabricating semiconductor devices using the same are provided. A cleaning solution used for cleaning a silicon surface and methods of fabricating a semiconductor device using the same are also provided. The cleaning solution may include 0.01 to 1 wt % of fluoric acid, 20 to 50 wt % of oxidizer and 50 to 80 wt % of water. The cleaning solution may further include 1 to 20 wt % of acetic acid. The cleaning solution may be used to clean a silicon surface exposed during fabrication processes of a semiconductor device. The cleaning solution may reduce damage of other material layers (e.g., a tungsten layer or a silicon oxide layer) and enable the silicon surface to be selectively etched.

Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same

A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

Cleaning solution and cleaning method of a semiconductor device

There are provided a cleaning solution for a silicon surface containing a buffer solution including acetic acid (CHCOOH) and ammonium acetate (CHCOONH), iodine oxidizer, hydrofluoric acid (HF), and water. In a method for fabricating a semiconductor device, a silicon substrate may have an exposed silicon surface, which may be cleaned using a cleaning solution that contains a buffer solution including acetic acid and ammonium acetate, iodine oxidizer, hydrofluoric acid, and water.

A semiconductor device having a dual gate is formed on a substrate having a dielectric layer. A first metallic conductive layer is formed on the dielectric layer to a first thickness, and annealed to have a reduced etching rate. A second metallic conductive layer is formed on the first metallic conductive layer to a second thickness that is greater than the first thickness. A portion of the second metallic conductive layer formed in a second area of the substrate is removed using an etching selectivity. A first gate structure having a first metallic gate including the first and the second metallic conductive layers is formed in a first area of the substrate. A second gate structure having a second metallic gate is formed in the second area. A gate dielectric layer is not exposed to an etching chemical due to the first metallic conductive layer, so its dielectric characteristics are not degraded.

Growing community of inventors

Yongin-si, South Korea

Sang-Yong Kim