Dnf Co., Ltd.

Samsung Electronics Co., Ltd.

Sang Yong Jeon

Sang Ick Lee

Myong Woon Kim

Se Jin Jang

Sung Gi Kim

Tae Seok Byun

Haeng Don Lim

Jeong Joo Park

A Ra Cho

Yong Hee Kwone

Won Mook Chae

Young Jae Im

Sang Chan Lee

Younjoung Cho

Jong Hyun Kim

Jungsik Choi

Byeong-il Yang

Sang-Do Lee

Joong Jin Park

Sam Dong Lee

Wonwoong Chung

Jang Hyeon Seok

Byeong Il Yang

Sunhye Hwang

In Kyung Jung

Kang Yong Lee

Sang Jun Yim

Jang Woo Seo

Haengdon Lim

Myoung Woon Kim

Gun Joo Park

Yeong Hun Kim

Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.

Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same

The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

Iodine-containing metal compound and composition for depositing thin film including the same

Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present disclosure has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.

Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same

The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.

Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same

A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si&#x2014;CHbonding unit to Si&#x2014;O bonding unit ranges from 0.5 to 5.

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si&#x2014;N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si&#x2014;N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Amino-silyl amine compound and the manufacturing method of dielectric film containing Si&#x2014;N bond by using atomic layer deposition

Growing community of inventors

Sejong, South Korea

Sang Yong Jeon