Samsung Electronics Co., Ltd.

Sang-Yeob Lee

Hyun-Won Mun

Min-Kyu Je

Seung-chan Heo

Il-Ku Nam

Byeong-Ha Park

Seong-Han Ryu

Jae-Hong Chang

Han-Gun Chung

Kwang-Seok Han

A voltage reference circuit and a current reference circuit using a vertical bipolar junction transistor (BJT) implemented by a deep N-well complementary metal-oxide semiconductor (CMOS) process, wherein the voltage reference circuit generates a constant reference voltage regardless of temperature and includes an amplifier element having a positive input terminal and a negative input terminal, a first transistor, and a second transistor. The first transistor is electrically connected to the positive input terminal and the second transistor is electrically connected to the negative input terminal. Each of the first and second transistors is a vertical BJT implemented by a deep N-well CMOS process, and the reference voltage is calculated by adding a base-emitter voltage of one of the first and second transistors to a value obtained by multiplying a thermal voltage by a predetermined factor. Accordingly, circuits having better reproducibility, uniformity, and device matching than circuits that use a lateral NPN/PNP device or substrate NPN/PNP device manufactured using a CMOS process are provided.

Voltage reference circuit and current reference circuit using vertical bipolar junction transistor implemented by deep n-well CMOS process

A gain controllable wide-band low noise amplifier includes a first transistor coupled to an input node and an output node and amplifying an input signal to generate an output signal, a second transistor allowing the output signal to feedback to the input node, and a control circuit complementarily controlling transconductance of the first and second transistors.

Gain controllable low noise amplifier and wireless communication receiver having the same

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Suwon-si, South Korea

Sang-Yeob Lee