Samsung Electronics Co., Ltd.

Sang-yeob Han

Chang-ki Hong

Jong-Won Lee

Bo-un Yoon

Jae-dong Lee

Suk-Hun Choi

Jong-Heun Lim

Seong-Kyu Yun

Provided may be a slurry composition for chemical mechanical polishing (CMP) and a CMP method using the same. For example, the slurry composition may include a first polishing inhibitor including at least one of POor HPOand a second polishing inhibitor, which may be a C-Chydrocarbon compound having &#x2014;SOH or &#x2014;OSOH. By using the slurry composition for CMP and a CMP method using the same, increased selectivity to SiN may be obtained.

Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same

A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.

Methods of fabricating a semiconductor device

A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO) and a sulfate ion (OSO), and an acidic aqueous solution.

Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same

Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.

Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same

A method of forming a semiconductor device includes: forming a pattern having trenches on a semiconductor substrate; forming a semiconductor layer on the semiconductor device that fills the trenches; planarizing the semiconductor layer using a first planarization process without exposing the pattern; performing an epitaxy growth process on the first planarized semiconductor layer to form a crystalline semiconductor layer; and planarizing the crystalline semiconductor layer until the pattern is exposed to form a crystalline semiconductor pattern.

Growing community of inventors

Anyang-si, South Korea

Sang-yeob Han