Samsung Electronics Co., Ltd.

Sang-woong Shin

Seong-Jin Jang

Hyeoung-won Seo

Soo-Ho Shin

Young-Yong Byun

Won-woo Lee

Dae-Hyun Chung

Jeong-soo Park

Kwang-il Park

Seung-Jun Bae

Ho-Young Song

Woo-Jin Lee

Gyu-Hong Kim

Hyun-Bae Lee

Cheon-An Lee

Soon-seob Lee

A semiconductor memory device includes a plurality of memory cell blocks including a first memory cell block having bit lines, an edge sense amplifier block including edge sense amplifiers coupled to a portion of the bit lines of the first memory cell block, and a balancing capacitor unit coupled to the edge sense amplifiers.

Semiconductor memory device having balancing capacitors

A semiconductor memory cell array includes a plurality of bit-lines, a plurality of word-lines, a plurality of memory cells, a plurality of dummy memory cells, a plurality of dummy bit-lines, and a plurality of dummy word-lines. The dummy bit-lines are in outer regions of the bit-lines. The dummy word-lines are in outer regions of the word-lines. The dummy bit-lines are maintained in a floating state. The dummy word-lines retain a turn-off voltage.

Semiconductor memory cell array including dummy bit-line and word-line and semiconductor memory device having the same

A sense amplifier having a pre-amplifier and a main-amplifier is disclosed. The pre-amplifier is connected to paired data line, senses and amplifies data on the paired data line using voltage mode and outputting a pair of differential signal. The main-amplifier is connected to the paired data line, senses and amplifies data on the paired data line using current mode and generating a first amplified signal, senses and amplifies the first amplified signal using voltage mode in response to the pair of differential signal, and outputting an amplified data.

Sense amplifier and semiconductor memory device using it

An antifuse circuit includes a protection circuit. The antifuse circuit receives a program voltage using a non-connection (NC) pin or ball of a semiconductor device. The protection circuit prevents an unintended voltage lower than the program voltage from being applied to the antifuse circuit.

Antifuse circuit having protection circuit

A high-speed double or quadrature data rate interface semiconductor device and a method thereof are provided. A transmitter (e.g., a data transmitting semiconductor device) for high-speed data transmission transmits a first strobe signal and a second strobe signal, which have a phase difference of 90 degrees there-between, a first group (byte of) data, and a second group (byte of) data. The transmitter adjusts the phase of at least one of the first and second strobe signals based on phase-error information fed back from a receiver and then transmits the phase-adjusted strobe signal to the receiver. The receiver receives the first and second strobe signals from the transmitter and receives the first group (byte of) data and the second group (byte of) data using the first and second strobe signals. The receiver does not require a phase-locked loop (PLL) or a delay-locked loop (DLL), thereby decreasing the circuit area and power consumption of the receiver. In addition, since source synchronization is realized using a strobe signal, phase noise can be efficiently removed.

High-speed phase-adjusted quadrature data rate (QDR) transceiver and method thereof

A circuit for generating a write data mask signal in a synchronous semiconductor memory device includes an output unit and a reset control unit. The output unit controls a write data mask operation of the synchronous semiconductor memory device, latches a write data mask signal, and outputs an internal write data mask signal, in response to an internal clock signal. The reset control unit generates a reset signal for resetting the internal write data mask signal, in response to a write column disable signal indicating an activation end point of a column selection line signal generated when a write operation including the write data mask operation is performed. While the synchronous semiconductor memory device performs a gapless write data mask operation included in a gapless write operation, the reset signal is deactivated so that the write data mask signal is not reset.

Circuit and method for generating write data mask signal in synchronous semiconductor memory device

In a method of generating an internal clock for a semiconductor memory device, a doubled clock is generated during operation in a high-speed test mode in response to an external clock. A data clock is generated by delaying the doubled clock so that data read from a memory cell array in the semiconductor memory device is output in synchronization with the external clock. A doubled sync clock synchronized with the external clock is generated by delaying the data clock. An internal clock is generated during operation in the high-speed test mode by delaying the doubled sync clock by a delay amount that corresponds to a delay amount experienced in generation of an internal clock in response to the external clock during operation in a normal mode. Accordingly, the high-speed test operation of the semiconductor memory device can be efficiently performed.

Method of generating an internal clock for a semiconductor memory device and semiconductor memory device using the same

Delayed locked loop (DLL) circuits and methods using a coarse-fine lock structure which prevent malfunction due to jitter or noise that causes erroneous transitions from a coarse-lock to a fine-lock delay. A phase detector uses two feedback signals to detect a phase of an external clock signal (or reference signal) based on a phase difference between the two feedback signals, thereby enabling a more accurate determination as to when to transition from a coarse-lock to a fine-lock delay. The phase difference of the two feedback signals can be regulated by using frequency information to set a phase difference between the first and second feedback signals to renders the detection process more robust against noise or jitter over a wide frequency band from a low frequency to a high frequency, for determining when to transition from the coarse-lock to the fine-lock.

Delay locked loop circuits and methods preventing erroneous transition from coarse lock to fine lock due to noise or jitter

A delay locked loop (DLL) is provided that includes a phase detector configured to detect a phase error between an internal clock signal and the external clock signal and output a phase error signal. A low pass filter is configured to output a predetermined control signal in response to the phase error signal. A variable delay circuit is configured to change a delay time in response to the predetermined control signal, delay the phase of the external clock signal with respect to the changed delay time, lock the delayed external clock signal and output the internal clock signal. A compensation delay circuit is configured to receive a control voltage based on a delay time introduced by a data output circuit and delay a phase of the internal clock signal for a first delay time based on the control voltage and output the delayed internal clock signal to the phase detector. Methods of compensating a delay for a DLL are also provided.

Delay locked loops having delay time compensation and methods for compensating for delay time of the delay locked loops

A synchronous semiconductor memory device includes an output control signal generating circuit that generates a data output control signal in response to an internal clock signal, an output control clock signal and a CAS latency signal. The output control signal generating circuit successively shifts read information signals in response to the internal clock signal and the output control clock signal, both source clocks of which are identical, and generates one of the shifted read information signals as an output control signal for indicating a data output period in response to the CAS latency signal. The synchronous semiconductor memory device can synchronize the source clocks of the clock signals used in the output control signal generating circuit thereby reducing the influence of clock jitter.

Methods for generating output control signals in synchronous semiconductor memory devices and related semiconductor memory devices

An output control signal generating circuit in a synchronous semiconductor memory device preferably comprises 1) a plurality of selectable clock signal transfer circuits for selectively delaying an applied clock signal in order to generate an output control clock signal in response to a predetermined CAS latency signal, wherein each one of the plurality of selectable clock signal transfer circuits inserts one or more time delays into the output control clock signal, 2) a sampling circuit for generating a plurality of output signals from a read master signal, and 3) a selection circuit for selecting one of plurality of output signals, thereby indicating a valid data output time interval. A method for operating the output control signal generating circuit causes a clock signal to be delayed by a selectable number of additional clock cycles, thereby insuring the outputting of a data signal only at a time when the data is valid.

Circuit and method for generating output control signal in synchronous semiconductor memory device

Integrated circuit devices having signal buffers therein include first and second storage devices that are electrically coupled in series and configured so that data can be loaded into the first storage device in-sync with a first clock signal (e.g., external clock signal) and then passed and loaded into the second storage device in-sync with a second clock signal (e.g., internal clock signal). The second clock signal is derived from the first clock signal and may be a delayed version of the first clock signal having an equivalent duty cycle. The buffer also comprises an integrated circuit that operates synchronously with the second clock signal and a transfer device that passes an output of the second storage device to the integrated circuit in-sync with the second clock signal. In this manner, data can be loaded into the integrated circuit in-sync with the same clock signal used to control the integrated circuit even though the data is originally transferred in-sync with another clock signal.

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Seongnam-si, South Korea

Sang-woong Shin