Samsung Electronics Co., Ltd.

Sang-Wook Lim

Bong-jin Kuh

Yong-Ho Ha

Doo-Hwan Park

Hee-Ju Shin

Han-Bong Ko

Young-Lim Park

Hye-Young Park

Jin-il Lee

Sung-lae Cho

Choong-Man Lee

Choong-Ho Lee

Hee-Soo Kang

Kyu-Charn Park

Dong-Uk Choi

Suk-Kang Sung

A method of manufacturing a phase-change memory device comprises forming a contact region on a substrate, forming a lower electrode electrically connected to the contact region, forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal, and forming an upper electrode on the phase-change material layer.

Methods for manufacturing a phase-change memory device

In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.

A non-volatile memory device includes a substrate and a tunnel insulation layer pattern, such that each portion of the tunnel insulation pattern extends along a first direction and adjacent portions of the tunnel insulation layer pattern may be separated in a second direction that is substantially perpendicular to the first direction. A non-volatile memory device may include a gate structure formed on the tunnel insulation layer pattern. The gate structure may include a floating gate formed on the tunnel insulation layer pattern along the second direction, a first conductive layer pattern formed on the floating gate in the second direction, a dielectric layer pattern formed on the first conductive layer pattern along the second direction, and a control gate formed on the dielectric layer pattern in the second direction.

Non-volatile memory devices including a floating gate and methods of manufacturing the same

A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.

Gap filling method and method for forming semiconductor memory device using the same

A phase-change memory device includes a substrate having a contact region, an insulating interlayer on the substrate, a lower electrode electrically connected to the contact region, a phase-change material layer pattern formed on the lower electrode, and an upper electrode formed on the phase-change material layer pattern. The phase-change material layer pattern includes a chalcogenide compound doped with carbon and at least one of nitrogen and metal. The phase-change memory device may have a considerably reduced driving current without increasing a set resistance thereof. Further, the phase-change material layer pattern may have an increased crystallization temperature so as to ensure improved data retention characteristics of the phase-change memory device.

Growing community of inventors

Gyeonggi-do, South Korea

Sang-Wook Lim