Lucent Technologies Inc.

Rutgers, the State University of New Jersey

Alcatel-Lucent USA Inc.

Sang-Wook Cheong

Harold Yoonsung Hwang

Namjung Hur

Tae-Yeong Koo

Bertram Josef Batlogg

Bog-Gi Kim

A solid structure includes a substrate and a layer located on a surface of the substrate. The layer includes crystalline or polycrystalline MgB.

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The room temperature, low field intergrain magnetoresistance (IMR) of the double perovsktite SrFeMOOis found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (SrBaFeMoO) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.

MgB2 superconductors

An electromechanical vice includes a support structure, a component moveable with respect to the support structure, and a piezoelectric device mechanically coupled to both the support structure and the component. The piezoelectric device includes a polycrystalline body and electrodes located on the body. The body has a composition with a stoichiometry described by &lsqb;Pb(Mg Nb )O &rsqb; &lsqb;PbTiO &rsqb; . The value of x is in the range of about 0.31 to about 0.47.

Devices using a ceramic piezoelectric

A device includes a polycrystalline body having a stoichiometry that is described by &lsqb;Pb(Mg Nb ))O &rsqb; &lsqb;PbTiO &rsqb; . The value of x is in a range of about 0.31 to about 0.47.

Ceramic piezoelectric and devices using the piezoelectric

An article that uses a magnetoresistive material comprising one or more CrO.sub.2 grains having an insulating material, advantageously Cr.sub.2 O.sub.3, along at least a portion of the grain boundary or boundaries, the magnetoresistive article advantageously exhibiting a magnetoresistance ratio greater than 12% at 5K and 20 kOe.

Article comprising magnetoresistive material

Magnetoresistive elements according to this invention comprise magnetically soft material in close proximity to the magnetoresistive material, exemplarily a perovskite manganite. The combination results in magnetic field 'amplification', with large resistance changes attainable at relatively low applied fields. The invention exemplarily is embodied in magnetic sensors, e.g., magnetoresistive read/write heads.

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Chatham, NJ, United States of America

Sang-Wook Cheong