Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Sang-Woo Whangbo

Shi-Yul Kim

Sang-Gab Kim

Woo-Geun Lee

Jang-Soo Kim

Min-Seok Oh

Jin-Ho Ju

Hong-Kee Chin

Hye-Young Ryu

Chong-Chul Chai

Sung-Hoon Yang

Hi-Kuk Lee

Soo-Wan Yoon

Jun-Hyung Souk

Soo-Jin Kim

Won-Kie Chang

Cheol-Gon Lee

Jin-Hwan Kim

Yong-Su Lee

Doo-Hee Jung

Seung-jun Jeong

A lens substrate includes a base substrate, a first lens electrode and a first signal line. The base substrate includes a lens area and a peripheral area surrounding the lens area. The first signal line in the peripheral area and includes a layered structure in which a first transparent conductive layer and a metal layer directly contact each other. The first lens electrode is in the lens area and includes the first transparent conductive layer excluding the metal layer. The first signal line is in the peripheral area. The first signal line is connected to the first lens electrode and includes a layered structure in which the first transparent conductive layer and the metal layer directly contact each other.

Lens substrate, method of manufacturing the lens substrate and lens panel having the lens substrate

A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

Thin film transistor substrate for display panel

Method for manufacturing thin film transistor and liquid crystal by treating a surface layer

A liquid crystal display (LCD) is provided that includes: a first substrate; a gate line formed on the first substrate; a data line intersecting the gate line to define a pixel; a thin-film transistor (TFT) connected to the gate line and the data line and formed in the pixel; a sustain electrode line including a first sustain electrode that passes through the pixel, so as to divide the pixel into a first region and a transparent second region, and a second sustain electrodes that extend perpendicularly from the first sustain electrode; and a first pixel electrode connected to the TFT, disposed in the first region.

Liquid crystal display

A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

Display device, method of manufacturing the same and mask for manufacturing the same

The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.

Thin film transistor array panel and fabrication

Growing community of inventors

Seoul, South Korea

Sang-Woo Whangbo