Samsung Display Co., Ltd.

Sang-Won Shin

Sang-Woo Sohn

Chang-Oh Jeong

Takayuki Fukasawa

Katsushi Kishimoto

Yeon-Keon Moon

Byeong-Beom Kim

Hyun-Eok Shin

Joon-Yong Park

Dong-Min Lee

Su-Kyoung Yang

Kyung-Seop Kim

Hyun-Ju Kang

Je-Hun Lee

Sang-Gab Kim

Eun-Young Lee

Dae-Young Lee

Hong-Sick Park

Hyeong-Suk Yoo

Gyungmin Baek

Sangwoo Sohn

Eun-Hyun Kim

Chan-Woo Yang

Hong-Long Ning

Xin-Xing Li

Eun-young Lee

A display substrate may include a substrate and a wiring on the substrate. The wiring may include a metal oxide layer including at least one oxide selected from tantalum (Ta), niobium (Nb), and titanium (Ti), and a metal layer on the metal oxide layer and including copper (Cu), and a thickness of the metal oxide layer may be in a range of about 30 angstroms (Å) to about 50 Å.

Display substrate, manufacturing method therefor, and display device including same

A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.

Metal oxide protection structure of a semiconductor device

In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.

System and method of manufacturing a thin film transistor substrate

An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

Oxide semiconductor depositing apparatus and method of manufacturing oxide semiconductor using the same

A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Sputtering device and gas supply pipe for sputtering device

A thin film transistor substrate includes a base substrate and a thin film transistor. The base substrate includes a gate line and a data line. The thin film transistor is connected to the gate line and the data line. The thin film transistor includes a gate electrode, a semiconductor pattern and source, drain electrodes. The gate electrode is disposed on the base substrate. The semiconductor pattern overlaps with the gate electrode. The source, drain electrodes is spaced apart from each other. The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer. The drain electrode includes a first drain layer, a second drain layer disposed on the first drain layer and a second diffusion barrier disposed between the first drain layer and second drain layer.

Thin film transistor substrate and display panel having the same

A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.

Metal wire, thin-film transistor substrate and method for manufacturing a thin-film transistor substrate

Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.

Apparatus for transferring substrate

A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.

Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Sang-Won Shin