Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Sang Won Shin

Hyun Eok Shin

Sang Woo Sohn

Gyung Min Baek

Ju Hyun Lee

Joon Yong Park

Dong Min Lee

Yeon Keon Moon

Hong Sick Park

Dong Hee Lee

Hyun Ju Kang

Sang Gab Kim

Takayuki Fukasawa

Joon Geol Lee

Katsushi Kishimoto

Kyeong Su Ko

Su Kyoung Yang

Do Keun Song

Hyung Jun Kim

Shin Il Choi

Chang Oh Jeong

Chan Woo Yang

Yoshinori Tanaka

Jung Hak Nam

Chang-Oh Jeong

Jun Hyung Lim

Do-Hyun Kim

Chang Ho Lee

Joon Seok Park

Chang Yong Jeong

Sung Chan Jo

Tae Sang Kim

Myoung Hwa Kim

Jung Gun Nam

Kang Soo Han

Hye Lim Choi

Moon Jung An

Soo Im Jeong

Gwang Min Cha

Kyung Lae Rho

Doo Hyoung Lee

Byeong Beom Kim

Hong Long Ning

Jin Ho Hwang

Woo Song Kim

Sung Wook Woo

Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

Display device

Display device and manufacturing method thereof

A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).

Display device and method for fabricating the same

An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.

Display device and method of fabricating the same

A display device may include a first base, a metal oxide layer overlapping a face of the first base, and a conductive metal layer directly contacting the metal oxide layer. The metal oxide layer may include molybdenum oxide. A side of the metal oxide layer may be oriented at a first angle relative to the face of the first base. A side of the conductive metal layer may be oriented at a second angle relative to the face of the first base. A size of the second angle may be in a range of 30&#xb0; to 75&#xb0;.

Wiring substrate and display device including wiring substrate

A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive layer and a metal oxide layer stacked on the conductive layer, wherein the metal oxide layer comprises molybdenum (Mo), tantalum (Ta), and oxygen (O). The conductive layer includes a first metal layer on the first base, and a second metal layer between the first metal layer and the metal oxide layer. The second metal layer has a higher electrical conductivity than the first metal layer, and a thickness of the second metal layer is greater than a thickness of the first metal layer.

Wire substrate and display device including the same

A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.

Conductive pattern with tapered angle, display device including the same, and method of manufacturing conductive pattern

A display device may include a base and a first wiring layer disposed on the base. The first wiring layer may include a first material and a second material layer that overlap each other. A material of the second material layer may be different from a material of the first material layer. The second material layer contains MoO, wherein 1.9&#x2264;x&#x2264;2.1.

Wiring substrate, display device including the wiring substrate, and method of fabricating the wiring substrate

An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

Thin film transistor array panel and organic light emitting diode display including the same

A display device includes: a thin film transistor to which signals are provided for displaying an image, the thin film transistor including a semiconductor layer, a data signal line and a gate signal line; and a first electrode with which the image is displayed, the first electrode connected to the thin film transistor. One signal line among the data signal line and the gate signal line in the thin film transistor includes a metal layer and an organic layer which is disposed on the metal layer, and the organic layer is an ion-doped photosensitive resin material.

Wire including organic layer, display device including the same and method of manufacturing the same

A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

Transistor and display device having the same

A display device according to an exemplary embodiment of the present invention includes: a substrate; a gate line and a data line that are provided on the substrate and are insulated from each other; a thin film transistor that is connected with the gate line and the data line; and a pixel electrode that is connected with the thin film transistor, in which at least one of the gate line and the data line includes a metal layer and a blocking layer that contacts the metal layer, and the blocking layer includes a first metal from a first group including molybdenum (Mo) and tungsten (W), a second metal from a second group including vanadium (V), niobium (Nb), zirconium (Zr), and tantalum (Ta), and oxygen (O).

A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoTaO, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.

Wire substrate, display device including the same, and method of fabricating wire substrate

A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer containing titanium nitride (TiN), and a second capping layer on the first capping layer, the second capping layer containing titanium (Ti).

Metal line and thin film transistor

Growing community of inventors

Yongin-si, South Korea

Sang Won Shin