Applied Materials, Inc.

Sang Won Kang

Dmitry Lubomirsky

Hua Chung

Olga Kryliouk

Dongqing Yang

Jie Su

Peter Hillman

Nicholas Celeste

David P Bour

Hiroji Hanawa

Wei-Yung Hsu

Anzhong Chang

Donald J K Olgado

David H Quach

Alexander Tam

Sumedh Acharya

Douglas Brenton Hayden

Kyawwin Jason Maung

Tuoh-Bin Ng

Jie Cui

Xizi Dong

Soonam Park

Lori D Washington

Sandeep Nijhawan

Tae Seung Cho

Tien Fak Tan

Dong Hyung Lee

Jacob Grayson

Raymond W Lu

Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing

A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Method of decontamination of process chamber after in-situ chamber clean

A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

Grooved insulator to reduce leakage current

Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.

Formation of group III-V material layers on patterned substrates

Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas

Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass

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San Jose, CA, United States of America

Sang Won Kang