Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Electronics and Telecommunications Research Institute

Samsung Electro-mechanics Co., Ltd.

Gwangju Institute of Science and Technology

C & S Technology Co., Ltd.

Sang Won Kang

Dong Joon Kim

Je Won Kim

Yong Chun Kim

Jeong Tak Oh

Dong Hyun Cho

Keun Man Song

Jeong Seok Oh

Sang Heon Han

Bang Won Oh

Sun Woon Kim

Seong Ju Park

Chang Yong Son

Joo Young Cho

Sang Jun Lee

Dong Yul Lee

Hyun Wook Shim

Dong Ju Lee

Sang Su Hong

Byung Sik Yoon

Min Ki Kwon

Jung Chul Lee

Seong Hoon Hong

Hyoung Jung Kim

Yoo Na Sung

Seung Beom Seo

Min Kyu Shim

Il Kyu Park

Won Il Lee

There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

Nitride semiconductor light emitting device

The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Nitride semiconductor light emitting device and fabrication method thereof

There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

Semiconductor light emitting device

The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.

There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.

A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.

A high-speed search method in a speech encoder using an order character of LSP (Line Spectrum Pair) parameters in an LSP parameter quantizer using SVQ (Split Vector Quantization) used in a low-speed transmission speech encoder, includes the steps of rearranging a codebook according to an element value of a reference row for determining a range of code vectors to be searched; and determining a search range by using an order character between a given target vector and an arranged code vector to obtain an optimal code vector. The method gives effects of reducing computational complexity required to search the codebook without signal distortion in quantizing the LSP parameters of the speech encoder using SVQ, and reducing computational complexity without loss of tone quality in G.729 fixed codebook search by performing candidate selection and search on the basis of the correlation value size of the pulse position index.

High-speed search method for LSP quantizer using split VQ and fixed codebook of G.729 speech encoder

A fast search method for LSP (Linear Spectrum Pair) quantization is provided. The fast search method in accordance with an embodiment of the present invention includes the following steps. A first step is obtaining a target vector and a code vector. The target vector and the code vector are converted for ordering property. A second step is generating a code book having the ordering property for sub-matrices by utilizing the target vector and the code vector. A third step is selecting a particular line for determining a search scope in the code books and sorting the code book in descending order with respect to component values of the particular line. A fourth step is determining the search scope by utilizing the ordering property of the target vector and the sorted code vectors. The fifth step is obtaining an error standard by utilizing the target vector and the code vector, and obtaining an optimal code vector by utilizing the error standard within the determined search scope.

Fast search method for LSP quantization

Growing community of inventors

Kyungki-do, South Korea

Sang Won Kang