Samsung Electronics Co., Ltd.

Sang-won Jung

Shin-Ho Oh

Sang-Kwon Moon

Min-Cheol Kwon

Hyun-chul Park

Young-pil Song

A nonvolatile memory device includes multi-level cells in a memory cell array including a plurality of memory blocks, and each of the memory blocks includes a plurality of pages. A method of operating the nonvolatile memory device includes pre-programming multi-bit data in a pre-program block of the memory blocks, dividing the multi-level cells into a plurality of state groups based on state codes indicating states of the multi-level cells to generate digest data indicating state group codes corresponding to the state groups, and programming the digest data in a digest block of the memory blocks.

Methods of operating nonvolatile memory devices, methods of operating storage device and storage devices

A storage device and a method of operating a storage device including a non-volatile memory. The method includes selecting a first task from among a plurality of tasks queued in a task queue of the storage device; determining whether a mode of the first task is identical to a mode of a previously-executed task; and determining an execution order of the first task according to a result of determination. The modes and the region addresses of tasks may be utilized to group tasks to permit interleaving of programming data.

Growing community of inventors

Busan, South Korea

Sang-won Jung