Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Sang Won Bae

Kuntack Lee

Yongsun Ko

Hyosan Lee

Hoon Hee Han

Kyounghwan Kim

Young-Hoo Kim

Kyunghyun Kim

Jihoon Jeong

Daehong Eom

Se-Ho Cha

Jinuk Lee

Jaewan Park

ChangSup Mun

Junghun Lim

Seonghwan Park

Byoungmoon Yoon

Chanjin Jeong

Yanghwa Lee

Boun Yoon

Ho Young Kim

Jung Hun Lim

Byoungho Kwon

Hyo Sun Lee

Min Goo Kim

Bo Yun Kim

Young-taek Hong

Yong Jae Choi

Hongjin Kim

Sol Han

Youngok Kim

Daehyuk Kang

Sungoh Park

Donghyun Kim

Wonsang Choi

Hoyoung Kim

Jae-Jik Baek

Imsoo Park

Hyo San Lee

Young Taek Hong

Jung Min Oh

Min Ju Im

Hyo Joong Yoon

Min Hyung Cho

Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.

Etching compositions and methods for fabricating semiconductor devices by using the same

An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (HPO), nitric acid (HNO), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO), silicic acid (HSiO), boric acid (HBO), acetic acid (CHCOOH), propionic acid (CHCOOH), lactic acid (CHCH(OH)COOH), and glycolic acid (HOCHCOOH).

Etching composition and method for fabricating semiconductor device by using the same

An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (HPO), nitric acid (HNO), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO), silicic acid (HSiO), boric acid (HBO), acetic acid (CHCOOH), propionic acid (CHCOOH), lactic acid (CHCH(OH)COOH), and glycolic acid (HOCHCOOH).

The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the same. The etching method includes supplying an etchant on an etch-target layer to etch the etch-target layer in a wet etch manner. The etchant contains a basic compound and a sugar alcohol, and the basic compound contains ammonium hydroxide or tetraalkyl ammonium hydroxide. In the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.

Etching method and method of fabricating a semiconductor device using the same

An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Etching composition

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching

Etching composition and method of manufacturing semiconductor device using the same

The inventive concept provides methods of manufacturing three-dimensional semiconductor devices. In some embodiments, the methods include forming a stack structure including sacrificial layers and insulation layers, forming a trench penetrating the stack structure, forming a hydrophobic passivation element on the surfaces of the insulation layers that were exposed by the trench and selectively removing the sacrificial layers.

Methods of manufacturing a three-dimensional semiconductor device

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching and methods of forming a semiconductor device using the same

Provided are nonvolatile memory devices with a three-dimensional structure and methods of fabricating the same. The nonvolatile memory device includes conductive patterns three-dimensionally arranged on a semiconductor substrate, semiconductor patterns that extend from the semiconductor substrate and intersect one-side walls of the conductive patterns, charge storage layers interposed between the semiconductor patterns and one-side walls of the conductive patterns, and seed layer patterns interposed between the charge storage layers and one-side walls of the conductive patterns.

Non-volatile memory device and method for fabricating non-volatile memory device

A method of fabricating a nonvolatile memory device with a three-dimensional structure includes alternately stacking first and second material layers in two or more layers on a semiconductor substrate, forming trenches penetrating the stacked first and second material layers by performing a first etching process, and removing the second material layers exposed in the trenches by performing a second etching process. The first and second material layers are formed of materials that have the same main component but have different impurity contents, respectively.

Method of fabricating nonvolatile memory device

Growing community of inventors

Suwon-si, South Korea

Sang Won Bae