Seoul Viosys Co., Ltd.

Chonnam National University

Sang Wan Ryu

Chang Yeon Kim

Joo Won Choi

Young Wug Kim

Jin Ho Kang

Jeong Hoon Heo

Su Yeon Hong

Myung Ha Yoon

Disclosed is an analgesic composition including an opioid analgesic and a therapeutically effective amount of P7C3, and the present analgesic composition may treat acute and facilitated pain very effectively, and has a significantly high synergistic effect compared to the effect by administration of individual drugs.

Analgesic composition including opioid analgesic and P7C3

Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Substrate recycling method and recycled substrate

The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off. The method for separating the semiconductor devices using a nanoporous structure includes the steps of: growing a first n-type nitride layer on the substrate; growing a dielectric layer on the first n-type nitride layer; forming a nanoporous structure in the first n-type nitride layer by means of electrochemical etching; re-growing a second n-type nitride layer on the first n-type nitride layer so as to form a second n-type nitride layer containing the dielectric layer; growing a multi-quantum well structure and a p-type nitride layer on the second n-type nitride layer for bonding with a conductive substrate; and separating the semiconductor devices from the substrate through selective HF etching of the dielectric layer.

Method for separating semiconductor devices using nanoporous structure

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Ansan-si, South Korea

Sang Wan Ryu