Samsung Electronics Co., Ltd.

Sang-Uk Han

Chajea Jo

Jeong-Kyu Ha

Jae-Min Jung

Ji Hwang Kim

KwanJai Lee

Cha-Jea Jo

Hyoeun Kim

Ji-hwang Kim

Jong-bo Shim

Jongbo Shim

KyongSoon Cho

Jae Choon Kim

Jichul Kim

Woohyun Park

Youngshin Kwon

Kyoung Soon Cho

Tae-Hong Min

Won-Il Lee

Seunghoon Yeon

Ji-seok Hong

Jong-youn Kim

Eun-Kyoung Choi

Tae-joo Hwang

Young-kun Jee

Jisun Yang

Jung-Do Lee

Hak-Kyoon Byun

Yeong-Hwan Choe

Seung Hwan Kim

Taehoon Kim

Un-Byoung Kang

Tae-Je Cho

Tae-Hun Kim

Yun-seok Choi

Seung-Hwan Kim

In-Young Lee

Taeje Cho

Sunkyoung Seo

Sang-wook Park

Jongkook Kim

Minki Kim

Hae-Jung Yu

Kwan-Jai Lee

Min Ki Kim

Ohguk Kwon

Young-Shin Kwon

Duckgyu Kim

Byoung-Soo Kwak

Gun-Ho Chang

Seungwon Park

Hyo-Eun Kim

Sungeun Pyo

Sang-won Kim

Chae-hun Im

Seonhyang You

Seon-Hyang You

Duck Gyu Kim

A chip-on-film package may include a film substrate including a chip region and an edge region, a semiconductor chip provided on the chip region and mounted on a top surface of the film substrate, the semiconductor chip including a chip pad adjacent to a bottom surface thereof, an input line and an output line provided on the edge region and disposed on the top surface of the film substrate, a connection terminal interposed between the film substrate and the semiconductor chip, and a redistribution pattern disposed between the semiconductor chip and the connection terminal.

Chip-on-film package having redistribution pattern between semiconductor chip and connection terminal

A semiconductor device includes: a substrate including a semiconductor chip region, a guard ring region adjacent to the semiconductor chip region, and an edge region adjacent to the guard ring region; a first interlayer insulating layer disposed on the substrate; a wiring structure disposed inside the first interlayer insulating layer and in the guard ring region, wherein the wiring structure includes a first wiring layer and a second wiring layer disposed above the first wiring layer; and a trench configured to expose at least a part of the first interlayer insulating, layer in the edge region, wherein the trench includes a first bottom surface and a second bottom surface formed at a level different from that of the first bottom surface, wherein the first bottom surface is formed between the wiring structure and the second bottom surface, and the second bottom surface is formed adjacent to the first bottom surface.

Semiconductor device

Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a molding layer, a silicon layer on the molding layer, a glass upwardly spaced apart from the silicon layer, and a connection dam coupled to the silicon layer and connecting the silicon layer to the glass. The silicon layer includes a silicon layer body, a silicon layer via extending vertically in the silicon layer body, and a micro-lens array on a top surface of the silicon layer body. A bottom surface of the silicon layer body contacts a top surface of the molding layer. The molding layer includes a molding layer body, a molding layer via that extends vertically in the molding layer body and has electrical connection with the silicon layer via, and a connection ball connected to a bottom surface of the molding layer via.

Semiconductor package and method of fabricating the same

An image sensor package includes an image sensor chip on a package substrate, a logic chip on the package substrate and perpendicularly overlapping the image sensor chip, and a memory chip on the package substrate and perpendicularly overlapping the image sensor chip and logic chip. The logic chip processes a pixel signal output from the image sensor chip. The memory chip is electrically connected to the image sensor chip through a conductive wire and stores at least one of the pixel signal from the image sensor chip or a pixel signal processed by the logic chip. The memory chip receives the pixel signal output from the image sensor chip through the conductive wire and receives the pixel signal processed by the logic chip through the image sensor chip and the conductive wire.

Image sensor package

Disclosed is a semiconductor package comprising a semiconductor chip, a first chip pad on a bottom surface of the semiconductor chip and adjacent to a first lateral surface in a first direction of the semiconductor chip, the first lateral surface separated from the first chip pad from a plan view in a first direction, and a first lead frame coupled to the first chip pad. The first lead frame includes a first segment on a bottom surface of the first chip pad and extending from the first chip pad in a second direction opposite to the first direction and away from the first lateral surface of the semiconductor chip, and a second segment which connects to a first end of the first segment and then extends along the first direction to extend beyond the first lateral surface of the semiconductor chip after passing one side of the first chip pad, when viewed in the plan view.

Semiconductor package

A semiconductor package includes a first semiconductor chip on a substrate, a second semiconductor chip on the substrate and spaced apart from the first semiconductor device, a mold layer on the substrate and covering sides of the first and second semiconductor chips, and an image sensor unit on the first and second semiconductor chips and the mold layer. The image sensor unit is electrically connected to the first semiconductor chip.

A semiconductor package includes a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a first semiconductor structure and a second semiconductor structure that are on the first semiconductor chip and spaced apart from each other across the second semiconductor chip, and a resin-containing member between the second semiconductor chip and the first semiconductor structure and between the second semiconductor chip and the second semiconductor structure. The semiconductor package may be fabricated at a wafer level.

A semiconductor package includes a first semiconductor chip. A second semiconductor chip is below the first semiconductor chip. A third semiconductor chip is below the second semiconductor chip. The second semiconductor chip includes a first surface in direct contact with the first semiconductor chip, and a second surface facing the third semiconductor chip. A first redistribution pattern is on the second surface of the second semiconductor chip and is electrically connected to the third semiconductor chip. The third semiconductor chip includes a third surface facing the second semiconductor chip. A conductive pad is on the third surface.

Semiconductor package including a redistribution line

A semiconductor package includes a lower substrate, a connection substrate coupled to the lower substrate, the connection substrate having a lateral portion surrounding a cavity, and a first conductive pattern on a top surface of the lateral portion, a lower semiconductor chip on the lower substrate, the lower semiconductor chip being in the cavity of the connection substrate, and the lower semiconductor chip including a second conductive pattern on a top surface of the lower semiconductor chip, a bonding member connecting the first conductive pattern and the second conductive pattern to each other, and a top package on the first conductive pattern and the second conductive pattern.

Semiconductor package with connection substrate and method of manufacturing the same

A substrate structure for an image sensor module includes a module substrate including a sensor mounting hole, a reinforcing plate on a lower surface of the module substrate, an image sensor chip on the reinforcing plate within the sensor mounting hole, and a reinforcing pattern in the module substrate. The reinforcing plate covers the sensor mounting hole. An upper surface of the image sensor chip may be exposed by the module substrate. The reinforcing pattern is adjacent to the sensor mounting hole and extends in at least one direction.

Substrate structures for image sensor modules and image sensor modules including the same

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Sang-Uk Han