Skhynix Inc.

Other

Sang Tae Ahn

Byung Soo Park

Sung Jae Chung

Eun Mee Kwon

Yung Jun Kim

Ji Seon Kim

Won Hyo Cha

Chun Young Ahn

A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.

Semiconductor device and manufacturing method of the semiconductor device

In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupled to at least one of programmed memory cells of the selected memory cell string. The first pre-bias voltage is greater than the standby voltage.

Method of programming semiconductor memory device

Provided is a fly wheel, including: a fly wheel body provided with a receiving part in which air is filled and mounted on driving shaft; a blade radially coupled to the fly wheel body, including a ventilation passage formed therein to be communicated with the receiving part and a puncturing part formed on an outer race thereof to be communicated with the ventilation passage, and generating thrust by discharging the air filled in the receiving part to the puncturing part at the time of rotating the driving shaft; and a check valve installed on the fly wheel body and being opened and closed by a pressure difference between the receiving part and the outside.

Fly wheel

A method of manufacturing a semiconductor device includes forming first auxiliary patterns, alternately forming first material layers and second material layers on the sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled, removing the second material layers, and forming charge storage layers in respective regions from which the second material layers have been removed.

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Seoul, South Korea

Sang Tae Ahn