Samsung Electronics Co., Ltd.

Sang-Sub Song

Sang-Ho An

Ki-Hong Jeong

Dong-ok Kwak

Joon-young Oh

In-sang Song

Sang-Ho Park

Tae-Young Lee

Nam-wook Kang

Chan-Ho Yoon

Jung-Pil Lee

Sung-wook Hwang

Yeoung-jun Cho

Tae-Heum Kim

Jeong-sik Yoo

A data storage device includes a controller connected via a plurality of channels to a plurality of clusters, wherein each cluster comprises a scale-out device including a scale-out controller and a buffer. The scale-out controller is connected to a plurality of sub-channels, each one of the plurality of sub-channels connecting a group of non-volatile memory (NVM) devices, such that the scale-out controller controls execution of data processing operations directed to any one of the NVM devices and the buffer.

Data storage device and data processing system including same

A solid-state drive (SSD) includes a main printed circuit board (PCB), and a first semiconductor package and a second semiconductor package respectively mounted on a top surface and a bottom surface of the main PCB. Each of the first and second semiconductor packages has a surface on which connection pads corresponding to a package ball map are disposed. The package ball map includes cells arranged in a plurality of rows and a plurality of columns, and one signal corresponds to each of the cells of the package ball map. The package ball map includes first signals corresponding to at least some of cells included in a selected reference column from among the plurality of columns, and at least one pair of second signals respectively corresponding to cells that are symmetrical to each other with respect to the reference column. The pair of second signals are swappable signals, and the first signals are not swappable signals.

Solid-state drive

A solid state drive (SSD) package type has a lower package including a lower package substrate, a controller chip mounted on the lower package substrate, and a plurality of upper packages disposed on the lower package as spaced apart from each other. The plurality of upper packages includes at least one non-volatile memory and at least one first individual electronic component. The upper packages are electrically connected to the lower package such that the package type is a package-on-package (PoP) type. The height of the first individual electronic component is greater than the spacing between the lower package and each of the upper packages.

Solid state drive package and data storage system including the same

Provided is a semiconductor package including a plurality of first semiconductor chips that are stacked on a substrate and a second semiconductor chip disposed on the plurality of first semiconductor chips. The plurality of first semiconductor chips comprises a first semiconductor chip group and a second semiconductor chip group. The first semiconductor chip group is electrically connected to the second semiconductor chip through a first channel. The second semiconductor chip group is electrically connected to the second semiconductor chip through a second channel. At least one of the first channel and the second channel extends along a top surface of the first semiconductor chip which is disposed on the uppermost side, or top of the stack, among the plurality of first semiconductor chips. The inventive concept may provide the semiconductor package having a high operation speed, low power consumption, and a small thickness and capable of being manufactured at low costs.

Semiconductor package

The present disclosure provides a memory device and a fabricating method thereof. The memory device includes a substrate including a first metal layer formed therein, the first metal layer having at least a first surface with at least a first exposed portion of the first surface exposed at a lateral surface of the substrate, at least a first semiconductor chip formed on a top surface of the substrate, and a second metal layer surrounding the first semiconductor chip and extending to lateral surfaces of the substrate, at least a first portion of the second metal layer contacting the exposed surface of the first metal layer.

Memory device and fabricating method thereof

Solid state drive (SSD) packages are provided including a controller package and at least one non-volatile memory package. The controller package and the at least one non-volatile memory package are connected to each other using a package-on-package (PoP) technique. A data input/output of the at least one non-volatile memory package is controlled by using the controller package.

Solid state drive packages and related methods and systems

A semiconductor device includes a substrate comprising a stack of alternating wiring layers and insulating layers. The wiring layers include conductive wiring patterns. Primary conductive vias extend through respective ones of the insulating layers and electrically connect first ones of the wiring patterns on different ones of the wiring layers to provide electrical connections between opposing first and second surfaces of the substrate. Dummy conductive vias extend through respective ones of the insulating layers and electrically connect second ones of the wiring patterns on different ones of the wiring layers. The dummy conductive vias are arranged in the substrate around a perimeter of a region including the first ones of the wiring patterns, and the dummy conductive vias and the second ones of the wiring patterns electrically connected thereto have a same electric potential to define an electromagnetic shielding structure within the substrate.

Growing community of inventors

Suwon-si, South Korea

Sang-Sub Song