Samsung Electronics Co., Ltd.

Yonsei University

Industry-University Cooperation Foundation Hanyang University

Sang-Su Park

Changhwa Kim

Beomsuk Lee

Kwansik Kim

Gang Zhang

Junghun Kim

Jaesung Hur

Taeyon Lee

Tae-Whan Kim

Min-Jun Choi

Kae-Dal Kwack

Beom-suk Lee

Man-Geun Cho

Suk-jin Kim

Dongchan Kim

Hyuk Soon Choi

Chang-Hwa Kim

Yoonkyoung Kim

Chang Hwa Kim

Beom Suk Lee

Kwan Sik Kim

Hajin Lim

JaeHee Oh

Taemin Kim

Jung-Hun Kim

Hyeong-Seok Yu

Hyung-yong Kim

Hong Ki Kim

Kwan-Sik Kim

Jae-Sung Hur

Jae Sung Hur

Hyungi Hong

Mangeun Cho

Yong-Surk Lee

Jin Hyung Kim

Gyuhyun Lim

Hee Sung Shim

Yoon-Kyoung Kim

Dae Kwn Ahn

An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.

Image sensor and method of manufacturing the same

Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

Image sensor

An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

Image sensor including transfer transistor having channel pattern on interlayered insulating layer over substrate and method of fabricating an image sensor

An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.

Image sensor with photoelectric part and transfer gate on opposite sides of the substrate

An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.

Method of fabricating image sensor

Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.

Image sensor with stacked structures

An image sensor includes a plurality of photo diodes disposed at a semiconductor substrate, and a splitter disposed on the photo diodes. The splitter splits an incident light depending on a wavelength so that split light of different colors enters different photo diodes, respectively. The splitter includes a first pattern structure having a cross-sectional structure in which a plurality of refractive layer patterns are deposited in a lateral direction.

Image sensor including splitter

An apparatus and method for converting data between a floating-point number and an integer is provided. The apparatus includes a data converter configured to determine a sign of input binary data and an output format to which to convert the input binary data and convert the input binary data into a one's complement number based on the sign and the output format of the input binary data, a bias value generator configured to determine whether the input binary data has been rounded up based on a rounding mode of the input binary data and generate a bias value accordingly; and an adder configured to convert the input binary data into a two's complement number by adding the one's complement number and the bias value.

Apparatus and method for converting data between a floating-point number and an integer

Provided are a semiconductor device and a method of forming the semiconductor device. The method may include forming a semiconductor pattern on a substrate, forming an interlayer insulating layer including an opening exposing the semiconductor pattern, forming a semiconductor ohmic pattern on the semiconductor pattern, forming an electrode ohmic layer on the semiconductor ohmic pattern, performing a wet etching on the electrode ohmic layer, and forming an electrode pattern on the etched electrode ohmic layer.

Semiconductor device and method of forming the same

A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.

Non-volatile memory device and method of operating the same

A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.

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Seoul, South Korea

Sang-Su Park