Samsung Electro-Mechanics Co., Ltd.

Samsung Led Co., Ltd.

Sang Su Hong

Jae Hun Kim

Hyun Kyung Kim

Bae Kyun Kim

Seok Min Hwang

Kun Yoo Ko

Kyu Han Lee

Bok Ki Min

Tak Gyum Kim

Chang Yun Lee

Woo Jin Lee

Hee Seung Kim

Young Woo Lee

Jin Uk Lee

Dong Hoon Kang

Je Won Kim

Dong Yul Lee

Grigory Onushkin

Sang Won Kang

Hong Ki Kim

Joong Kon Son

In Hyung Lee

Keun Man Song

Jong Hoon Lim

Chung Mo Yang

June Sik Park

Disclosed herein is a touch sensor, including: a transparent substrate; and an electrode pattern formed on the transparent substrate, wherein the electrode pattern is formed in a mesh pattern and the mesh pattern includes at least one of the irregular unit patterns. Each unit pattern forming the mesh pattern may be formed in a polygonal shape.

Touch sensor comprising mesh pattern with irregular shape

Disclosed herein is a touch panel, including: a first transparent substrate; a bezel portion formed on one surface of the first transparent substrate; and an electrode portion formed on the other surface of the first transparent substrate, wherein the bezel portion and the electrode portion are formed by exposing/developing a silver salt emulsion layer.

Touch panel and method for manufacturing the same

Disclosed herein is a structure of an FPC integrated touch panel. According to preferred embodiments of the present invention, a transparent substrate configured of a flexible transparent film is provided and an extension part protruded to the transparent substrate is integrally formed with the transparent substrate, such that a separate FPC needs not to be manufactured, thereby saving process time and manufacturing costs. In addition, the exemplary embodiments of the present invention bend an inactive area unnecessarily occupying an area of the transparent substrate to a side of the touch panel, thereby implementing a touch panel widening a substantial area of an active region.

Touch panel

The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Nitride semiconductor light emitting device

Disclosed are a light emitting diode (LED) inspection apparatus, which can determine whether an LED has a defect such as leakage current, without making physical contact with the LED being inspected, and an LED inspection method thereof. The LED inspection apparatus includes an ultraviolet emission unit emitting UV light to an LED, an image generation unit generating an image of the LED to which the UV light is emitted, and a control unit obtaining color or intensity information of the LED from the image of the LED and determining, based on the color information, whether the LED is defective.

LED inspection apparatus and LED inspection method using the same

There is provided a multi-beam laser apparatus including: a laser beam source generating a beam; an incident lens disposed on a path of the beam; a beam splitter splitting the beam incident on the incident lens into a plurality of beamlets; and a beam path adjustor disposed on each of paths of the split beamlets to change the respective paths of the split beamlets. The multi-beam laser apparatus easily produces a plurality of beamlets and adjusts paths of the beamlets obtained by a prism to improve machinability quality and uniformity.

Multi-beam laser apparatus

There is provided a method of manufacturing an optical waveguide, the method including: allowing a beam to be incident in an optical waveguide direction of an optical waveguide material; generating an optical soliton in the optical waveguide material by adjusting intensity of the incident beam according to the optical waveguide material; allowing the incident beam to be re-incident at an intensity higher than an intensity of the incident beam after checking generation of the optical soliton in the optical waveguide material; and increasing a refractive index of an optical soliton-generating area of the optical waveguide material by the re-incident beam to thereby form an optical waveguide.

Method of manufacturing optical waveguide using optical soliton

A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.

Growing community of inventors

Gyunggi-do, South Korea

Sang Su Hong