Skhynix Inc.

Lsi Logic Corporation

Mie Fujitsu Semiconductor Limited

Anaflash Inc.

Hynix Semiconductor Inc.

Suvolta, Inc.

Kilopass Technology, Inc.

Sang-Soo Lee

Yibing Michelle Wang

Jeff Rysinski

Cormac S Conroy

Ara Bicakci

Augustine Kuo

Seung-Hwan Song

Edward John Boling

Chun-Sup Kim

Samuel W Sheng

David Anthony Kidd

Samuel Leshner

Vineet Agrawal

Jeffrey Joseph Rysinski

Chao-Wu Chen

Robert Rogenmoser

Hongyu Wang

Tzu-Wang Pan

John DeCelles

Ji Hye Hur

Sihwan Kim

Heetae Ahn

An analog multiplier accumulator array comprises analog multipliers organized in a matrix of rows and columns, each of the multiplier comprising one or more than one analog input signal line coupled to the analog multipliers in a row of the array; an analog level sensing circuit; a set of bit lines, each bit line electrically connected to the analog multiplier in each column of the row; and an analog accumulator configured to connect the set of the bit lines to an analog level sensing circuit for generating digital output signals, wherein an access transistor connected to the analog input line and a variable resistor form the analog multiplier.

Multiply-accumulate unit

A non-volatile synapse circuit of a non-volatile neural network. The synapse includes: an input signal line; a reference signal line; first and second output lines, and first and second cells for generating the first and second output signals, respectively. Each of the first and second cells includes: an upper select transistor having a gate that is electrically coupled to the input signal line; and a resistive changing element having one end connected to the upper select transistor in series and another end electrically coupled to the reference signal line. The value of the resistive changing element is programmable to change the magnitude of an output signal. The drain of the upper select transistor of the first cell is electrically coupled to the first output line and the drain of the upper select transistor of the second cell is electrically coupled to the second output line.

Neural network circuits having non-volatile synapse arrays

A synapse circuit of a non-volatile neural network. The synapse includes: an input signal line; a reference signal line; an output line, and a cell for generating the output signal. The cell includes: an upper select transistor having a gate that is electrically coupled to the input signal line; and a resistive changing element having one end connected to the upper select transistor in series and another end electrically coupled to the reference signal line. The value of the resistive changing element is programmable to change the magnitude of an output signal. The drain of the upper select transistor is electrically coupled to the first output line.

Voltage reference circuits configured to generate a voltage reference with a programmable temperature slope are disclosed. By combining and programming a PTAT (Proportional To Absolute Temperature) voltage generation circuit and a CTAT (Complementary To Absolute Temperature) voltage generation circuit, desired temperature slope for the voltage reference is obtained. To adjust both temperature slope and offset of the voltage reference, the voltage reference circuits include a bandgap reference circuit. The bandgap reference circuit is used to create a temperature independent current, which is coupled to a programmable string of resistors and programmable string of MOSFETs to produce a desired temperature slope for the voltage reference. The desired offset of the voltage reference is obtained by the temperature-independent current into another string of programmable resistors. A circuit architecture and method to control the temperature slope and offset of the voltage reference independently is disclosed.

Voltage reference circuits with programmable temperature slope and independent offset control

An integrated circuit can include at least one slew generator circuit comprising at least one body biasable reference transistor, the slew generator circuit configured to generate at least a first signal having a slew rate that varies according to characteristics of the reference transistor; a pulse generator circuit configured to generate a pulse signal having a first pulse with a duration corresponding to the slew rate of the first signal; and a counter configured to generate a count value corresponding to a duration of the first pulse.

Slew based process and bias monitors and related methods

Aspects of the invention may comprise receiving a first input signal and a second input signal via respective first and second input transistors. A biasing signal, generated by a cascode bias generator, that tracks the first input signal, where the biasing signal has a fixed offset with respect to the first input signal. The biasing signal may be applied to the first and second cascode transistors that may be cascoded to the first and second input transistors, respectively.

Cascoded comparator with dynamic biasing for column parallel single slope ADCs

A circuit can include at least one pair of deeply depleted channel (DDC) transistors having sources commonly coupled to a same current path; and a bias circuit configured to provide bias currents to the drains of the DDC transistors; wherein each DDC transistor includes a source and drain doped to a first conductivity type, a substantially undoped channel region, and a highly doped screening region of the first conductivity type formed below the channel region.

Analog circuits having improved insulated gate transistors, and methods therefor

Aspects of the invention may include receiving a first input signal and a second input signal via respective first and second input transistors. A biasing signal, generated by a cascode bias generator, tracks the first input signal, where the biasing signal has a fixed offset with respect to the first input signal. The biasing signal may be applied to the first and second cascode transistors that may be cascoded to the first and second input transistors, respectively.

An integrated circuit device can include at least a first bi-directional biasing circuit having a first substrate portion containing a plurality of first transistors; a first control digital-to-analog converter (DAC) to generate any of a plurality of first target values in response to a first target code; a first detect circuit configured to generate a difference value between the first target values and a first limit value; and at least a first charge pump circuit configured to drive the first substrate portion between a forward body bias voltage and a reverse body bias voltage for the first transistors in response to first target values. Embodiments can also include a performance monitor section configured to determine a difference between the voltage of the first substrate portion and a target voltage. Control logic can generate first code values in response to the difference between the voltage of the first substrate portion and the target voltage. Methods are also disclosed.

Circuits and devices for generating bi-directional body bias voltages, and methods therefor

An image processing system includes a pixel array including a plurality of regular pixel columns and at least one test pixel column, a plurality of column analog-to-digital converters (ADCs) configured to correspond to the regular pixel columns and convert analog input signals into digital signals, and a switching block configured to provide output signals of the regular pixel columns to input ends of the corresponding column ADCs in a normal mode, and provide in common an output signal of the test pixel column to the input ends of the column ADCs in a test mode, wherein the test pixel column generates signals having a minute voltage different from one row to another row.

Image processing system with on-chip test mode for column ADCs

Circuits, methods, and apparatus that provide differential-input, single-slope, column-parallel analog-to-digital converter (ADC) architectures for use in high-resolution CMOS image sensors (CIS) are described. A column ADC is coupled with a column of a pixel array and configured to convert a pixel signal level to a corresponding digital output value according to a ramp generator output. Each pixel is configured to output a pixel reset level and a pixel signal level at different operating stages, and the ramp generator output includes a ramp reset level and a ramp signal level at the same or different at different operating stages. The pixel and ramp outputs are used to differentially drive a comparator stage of the column ADC, for example, to reduce power supply noise.

Differential column ADC architectures for CMOS image sensor applications

Circuits, methods, and apparatus are described that provide calibration of column-parallel analog-to-digital converters (ADCs) in image processing contexts only once per frame (or less frequently) to reduce column-wise noise. For example, the column ADCs are calibrated during an inter-frame time interval, like a vertical blanking interval. In some embodiments, calibration data for the column ADCs for a calibration period is stored at the digital block for use in processing row data from the column ADCs. In other embodiments, calibration data for the column ADCs for the calibration period is stored at column ADCs in a local memory for local correction of the pixel data prior to being read out to the digital block for processing. In certain embodiments, techniques, such as differential ADC architectures, are used to mitigate row-wise noise in context of the frame-wise calibration.

Frame-wise calibration of column-parallel ADCs for image sensor array applications

Various embodiments of the present invention include enabling, during a calibration phase, a counter to count one less than a number of clock periods associated with a determined offset. The counted number of the clock periods is stored in calibration memory. In a conversion phase, inverted outputs are loaded from the calibration memory to the counter, where the counter is enabled to count the clock periods to determine a digital equivalent value of an analog signal amplitude.

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Cupertino, CA, United States of America

Sang-Soo Lee