Samsung Electronics Co., Ltd.

Sang-Soo Cha

Young-Seop Shim

Jae-Hong Kim

Dae-Won Kim

Jin-Man Han

An operating method of a storage device, which includes a nonvolatile memory device, includes entering a power-on mode, searching for an open memory block, which includes at least one erase word line, from among memory blocks included in the nonvolatile memory device, applying a program voltage to the at least one erase word line to close the open memory block if the number of the erase word lines included in the open memory block is not more than a preset value, and after the power-on mode, entering a normal operation mode. Memory cells connected to the at least one erase word line to which the program voltage is applied are programmed to have a threshold voltage distribution range higher than a threshold voltage distribution range of an erase state.

Storage device and operating method for applying a program voltage to erased word line to close open memory block

A method of operating a storage device includes: performing a background read operation on a nonvolatile memory by using a default read voltage level; performing a read retry operation on the nonvolatile memory by using a corrected read voltage level when the background read operation fails; storing the corrected read voltage level in a history buffer when the read retry operation succeeds; and performing a host read operation on the nonvolatile memory by using the history buffer in response to a read request received from a host.

Storage device and method of operating the storage device

In a method of operating a nonvolatile memory device, a plurality of pages of a first memory block of a plurality of memory blocks of a memory cell array are programmed. After programming, a dummy pulse is applied to at least some of the plurality of memory blocks at least once before a read operation on is performed on one of the plurality of pages.

Nonvolatile memory devices, methods of operating the same and solid state drives including the same

An method is provided for operating a memory system. The method includes reading data from memory cells connected to a selected word line to generate read data; performing an error correction operation based on the read data and generating segmented error correcting code (ECC) read data; transferring the segmented ECC read data to a host side buffer and increasing a value of a host DMA count; comparing the value of the host DMA count with a read latency count value; selectively updating an ECC status information signal according to the comparison result; and transferring the segmented ECC read data to a host.

Growing community of inventors

Suwon-si, South Korea

Sang-Soo Cha