Samsung Electronics Co., Ltd.

Sang Shin Jang

Jong Min Baek

Woo Kyung You

Kyu-Hee Han

Byung Hee Kim

Kyu Hee Han

Jang Ho Lee

Sung Jin Kang

Woo Jin Lee

Vietha Nguyen

Nae In Lee

Viet Ha Nguyen

Han Seong Kim

Eun Ji Jung

Han Bit Kim

Koung Min Ryu

Jung Hwan Chun

Bong Kwan Baek

Jung Hoo Shin

Semiconductor devices with improved performance and reliability and methods for forming the same are provided. The semiconductor devices include an active pattern extending in a first direction, gate structures spaced apart from each other in the first direction on the active pattern, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner extending along a sidewall of the source/drain contacts. A carbon concentration of the contact liner at a first point of the contact liner is different from a carbon concentration of the contact liner at a second point of the contact liner, and the first point is at a first height from an upper surface of the active pattern, the second point is at a second height from the upper surface of the active pattern, and the first height is smaller than the second height.

Semiconductor devices and methods for fabricating the same

A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Semiconductor device

Semiconductor device and method of fabricating the same

A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

Semiconductor device and method for fabricating the same

Semiconductor device with air gap between wires and method for fabricating the same

A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.

Semiconductor devices and methods of manufacturing the same

Growing community of inventors

Gwangyang-si, South Korea

Sang Shin Jang