Samsung Electronics Co., Ltd.

Sang-Seok Lee

Hyun-Taek Jung

Jong-Doo Joo

Cheol-Ha Lee

A memory device includes a main one-time programmable (OTP) memory cell connected to a main word line and a main bit line; a redundant OTP memory cell connected to a redundant word line and a redundant bit line; and an input/output circuit configured to, during a program operation to program the main OTP memory cell and the redundant OTP memory cell, electrically separate the main bit line and the redundant bit line and form a first program current path to the main bit line and a second program current path to redundant bit line, wherein the first program current path and the second program current path are independent from each other.

Memory device including OTP memory cell and program method thereof

A one-time programmable (OTP) memory device includes an OTP cell array, a latch controller, a column selection circuit, and a latch circuit. The OTP cell array includes a plurality of OTP memory cells respectively connected to a plurality of bitlines. The latch controller generates a latch address signal indicating an address that is changed sequentially in an enable mode to initialize the OTP memory device. The column selection circuit electrically connects a plurality of bitline groups of the bitlines to a plurality of input-output lines sequentially based on the latch address signal in the enable mode. The latch circuit receives and stores fuse bits provided sequentially through the bitline groups and the input-output lines in the enable mode.

One-time programmable (OTP) memory device for reading multiple fuse bits

An oscillation circuit includes an internal voltage generator and an oscillator. The internal voltage generator receives an external voltage and generates an internal voltage based on the external voltage. The internal voltage varies in linearly with an operational temperature. The oscillator generates a variable oscillation signal based on the internal voltage. A period of the variable oscillation signal varies in linearly with the operational temperature.

Growing community of inventors

Hwaseong-si, South Korea

Sang-Seok Lee